Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lei, Xiao-Yi, Liu, Hong-Xia, Zhang, Kai, Zhang, Yue, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2013) Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET. Chinese Physics B, 22. 47304pp. doi:10.1088/1674-1056/22/4/047304

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
JournalChinese Physics B
AuthorsLei, Xiao-YiAuthor
Liu, Hong-XiaAuthor
Zhang, KaiAuthor
Zhang, YueAuthor
Zheng, Xue-FengAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2013 (April)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/4/047304Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6003616Long-form Identifiermindat:1:5:6003616:4
GUID0
Full ReferenceLei, Xiao-Yi, Liu, Hong-Xia, Zhang, Kai, Zhang, Yue, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2013) Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET. Chinese Physics B, 22. 47304pp. doi:10.1088/1674-1056/22/4/047304
Plain TextLei, Xiao-Yi, Liu, Hong-Xia, Zhang, Kai, Zhang, Yue, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2013) Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET. Chinese Physics B, 22. 47304pp. doi:10.1088/1674-1056/22/4/047304
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Lei, Xiao-Yi, Liu, Hong-Xia, Zhang, Yue, Ma, Xiao-Hua, Hao, Yue (2014) Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET. Chinese Physics B, 23. 57305pp. doi:10.1088/1674-1056/23/5/057305
Zhang, Kai, Cao, Meng-Yi, Lei, Xiao-Yi, Zhao, Sheng-Lei, Yang, Li-Yuan, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2013) Field plate structural optimization for enhancing the power gain of GaN-based HEMTs. Chinese Physics B, 22. 97303pp. doi:10.1088/1674-1056/22/9/097303
Ma, Xiao-Hua, Cao, Yan-Rong, Hao, Yue, Zhang, Yue (2011) Hot carrier injection degradation under dynamic stress. Chinese Physics B, 20. 37305pp. doi:10.1088/1674-1056/20/3/037305
Zhang, Yue, Pu, Shi, Lei, Xiao-Yi, Chen, Qing, Ma, Xiao-Hua, Hao, Yue (2013) Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps. Chinese Physics B, 22. 117311pp. doi:10.1088/1674-1056/22/11/117311
Cao, Yan-Rong, Yang, Yi, Cao, Cheng, He, Wen-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2015) Recovery of PMOSFET NBTI under different conditions. Chinese Physics B, 24. 97304pp. doi:10.1088/1674-1056/24/9/097304
Cao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303
Wang, Chong, He, Yun-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2013) AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO. Chinese Physics B, 22. 68503pp. doi:10.1088/1674-1056/22/6/068503
He, Yun-Long, Zhang, Fang, Liu, Kai, Hong, Yue-Hua, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Hao, Yue (2022) Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate. Chinese Physics B, 31 (6) 68501 doi:10.1088/1674-1056/ac3739
Zhang, Kai, Cao, Meng-Yi, Chen, Yong-He, Yang, Li-Yuan, Wang, Chong, Ma, Xiao-Hua, Hao, Yue (2013) Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 22. 57304pp. doi:10.1088/1674-1056/22/5/057304
Yang, Li-Yuan, Xue, Xiao-Yong, Zhang, Kai, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2012) Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique. Chinese Physics B, 21. 77304pp. doi:10.1088/1674-1056/21/7/077304
Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Zhang, Jin-Cheng, Hao, Yue (2013) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress. Chinese Physics B, 22. 107303pp. doi:10.1088/1674-1056/22/10/107303
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 04:52:03
Go to top of page