Cao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress | ||
| Journal | Chinese Physics B | ||
| Authors | Cao, Yan-Rong | Author | |
| He, Wen-Long | Author | ||
| Cao, Cheng | Author | ||
| Yang, Yi | Author | ||
| Zheng, Xue-Feng | Author | ||
| Ma, Xiao-Hua | Author | ||
| Hao, Yue | Author | ||
| Year | 2014 (November) | Volume | 23 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/23/11/117303Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6004447 | Long-form Identifier | mindat:1:5:6004447:3 |
| GUID | 0 | ||
| Full Reference | Cao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303 | ||
| Plain Text | Cao, Yan-Rong, He, Wen-Long, Cao, Cheng, Yang, Yi, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2014) Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress. Chinese Physics B, 23. 117303pp. doi:10.1088/1674-1056/23/11/117303 | ||
| In | (n.d.) Chinese Physics B Vol. 23. IOP Publishing | ||
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