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Zhang, Ya-Chao, Wang, Zhi-Zhe, Guo, Rui, Liu, Ge, Bao, Wei-Min, Zhang, Jin-Cheng, Hao, Yue (2019) High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition. Chinese Physics B, 28. 18102pp. doi:10.1088/1674-1056/28/1/018102

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Reference TypeJournal (article/letter/editorial)
TitleHigh-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
JournalChinese Physics B
AuthorsZhang, Ya-ChaoAuthor
Wang, Zhi-ZheAuthor
Guo, RuiAuthor
Liu, GeAuthor
Bao, Wei-MinAuthor
Zhang, Jin-ChengAuthor
Hao, YueAuthor
Year2019 (January)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/28/1/018102Search in ResearchGate
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Mindat Ref. ID6009812Long-form Identifiermindat:1:5:6009812:8
GUID0
Full ReferenceZhang, Ya-Chao, Wang, Zhi-Zhe, Guo, Rui, Liu, Ge, Bao, Wei-Min, Zhang, Jin-Cheng, Hao, Yue (2019) High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition. Chinese Physics B, 28. 18102pp. doi:10.1088/1674-1056/28/1/018102
Plain TextZhang, Ya-Chao, Wang, Zhi-Zhe, Guo, Rui, Liu, Ge, Bao, Wei-Min, Zhang, Jin-Cheng, Hao, Yue (2019) High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition. Chinese Physics B, 28. 18102pp. doi:10.1088/1674-1056/28/1/018102
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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