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Carter, G., Katardjiev, I. V., Nobes, M. J. (1989) The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles. Surface and Interface Analysis, 14 (9). 511-523 doi:10.1002/sia.740140905

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Reference TypeJournal (article/letter/editorial)
TitleThe deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles
JournalSurface and Interface Analysis
AuthorsCarter, G.Author
Katardjiev, I. V.Author
Nobes, M. J.Author
Year1989 (September)Volume14
Issue9
PublisherWiley
DOIdoi:10.1002/sia.740140905Search in ResearchGate
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Mindat Ref. ID6502303Long-form Identifiermindat:1:5:6502303:1
GUID0
Full ReferenceCarter, G., Katardjiev, I. V., Nobes, M. J. (1989) The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles. Surface and Interface Analysis, 14 (9). 511-523 doi:10.1002/sia.740140905
Plain TextCarter, G., Katardjiev, I. V., Nobes, M. J. (1989) The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles. Surface and Interface Analysis, 14 (9). 511-523 doi:10.1002/sia.740140905
In(1989, September) Surface and Interface Analysis Vol. 14 (9) Wiley

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Katardjiev, I. V., Nobes, M. J., Carter, G. (1989) The precise determination of concentration distributions using depth-sectioning methods. Surface and Interface Analysis, 14 (9). 572-574 doi:10.1002/sia.740140914
Carter, G., Katardjiev, I. V., Nobes, M. J. (1989) An altered layer model for sputter-profiling. Surface and Interface Analysis, 14 (4). 194-208 doi:10.1002/sia.740140406
Carter, G., Nobes, M. J., Katardjiev, I. V. (1990) The effect of atomic-scale etch pit formation on depth resolution in sputter profiling. Surface and Interface Analysis, 15 (7). 447-450 doi:10.1002/sia.740150709
Carter, G., Nobes, M. J., Stoere, H., Katardjiev, I. V. (1993) The evolution of atomic scale topography by sputtering erosion. Surface and Interface Analysis, 20 (1). 90-94 doi:10.1002/sia.740200113
Carter, G., Nobes, M. J., Lewis, G. W., Brown, C. R. (1985) The effect of surface topography evolution on sputter profiling depth resolution in Si. Surface and Interface Analysis, 7 (1). 35-40 doi:10.1002/sia.740070108
Carter, G., Nobes, M. J. (1992) Ion-beam-induced topography and compositional changes in depth profiling. Surface and Interface Analysis, 19 (1). 39-49 doi:10.1002/sia.740190111
Roos, W. D., van Wyk, G. N., du Plessis, J. (1993) Use of AES to determine sputter-induced concentration profiles in Cu-Ni alloys. Surface and Interface Analysis, 20 (1). 95-98 doi:10.1002/sia.740200114
Carter, G., Nobes, M. J., Abril, I., Garcia-Molina, R. (1985) Facet development and its influence on depth resolution during sputtering of Si. Surface and Interface Analysis, 7 (1). 41-48 doi:10.1002/sia.740070109
Carter, G., Nobes, M. J., Katardjiev, I. V. (1992) Sputter polishing of surfaces. Philosophical Magazine B, 66 (3). 419-425 doi:10.1080/13642819208207660
Carter, G., Nobes, M. J., Katardjiev, I. V., Smith, R. (1989) The evolution of gradient discontinuities (edges) on sputter-eroded surfaces. Philosophical Magazine B, 59 (6). 619-636 doi:10.1080/13642818908211181
Mitchell, D. F., Arlow, J. S., Phillips, J. R., Sproule, G. I. (1989) Optimized ion beam raster for SIMS sputter depth profiling. Surface and Interface Analysis, 14 (6). 302-306 doi:10.1002/sia.740140606
 
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