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Mott, D. B., Buchner, S. P. (1987) Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation. Applied Physics Letters, 51 (20). 1643-1644 doi:10.1063/1.98582

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Reference TypeJournal (article/letter/editorial)
TitleComparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation
JournalApplied Physics Letters
AuthorsMott, D. B.Author
Buchner, S. P.Author
Year1987 (November 16)Volume51
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.98582Search in ResearchGate
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Mindat Ref. ID8481491Long-form Identifiermindat:1:5:8481491:1
GUID0
Full ReferenceMott, D. B., Buchner, S. P. (1987) Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation. Applied Physics Letters, 51 (20). 1643-1644 doi:10.1063/1.98582
Plain TextMott, D. B., Buchner, S. P. (1987) Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation. Applied Physics Letters, 51 (20). 1643-1644 doi:10.1063/1.98582
In(1987, November) Applied Physics Letters Vol. 51 (20) AIP Publishing

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Majkusiak, B., Jakubowski, A., Grigorov, K., Balasiński, A. (1990) Influence of high‐dose γ irradiation on electron mobility in a silicon inversion layer. Applied Physics Letters, 57 (16). 1643-1644 doi:10.1063/1.104074
Hook, Terence B., Ma, T.‐P. (1987) Electron trapping during high‐field tunneling injection in metal‐oxide‐silicon capacitors: The effect of gate‐induced strain. Journal of Applied Physics, 62 (3). 931-938 doi:10.1063/1.339703
Nazarov, A. N., Kilchytska, V. I., Houk, Y., Ballutaud, D. (2003) Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection. Journal of Applied Physics, 94 (3). 1823-1832 doi:10.1063/1.1589591
Balasiński, Artur, Ma, T. P. (1993) Reduction of interface‐trap density in metal‐oxide‐semiconductor devices by irradiation. Applied Physics Letters, 62 (24). 3170-3171 doi:10.1063/1.109118
Mikawa, R. E., Lenahan, P. M. (1986) Electron spin resonance study of interface states induced by electron injection in metal‐oxide‐semiconductor devices. Journal of Applied Physics, 59 (6). 2054-2059 doi:10.1063/1.336390
Fleetwood, D. M., Winokur, P. S., Dozier, C. M., Brown, D. B. (1988) Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation. Applied Physics Letters, 52 (18). 1514-1516 doi:10.1063/1.99116
Neri, B., Olivo, P., Riccò, B. (1987) Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown. Applied Physics Letters, 51 (25). 2167-2169 doi:10.1063/1.98930
Campbell, S. A., Lee, K. H., Li, H. H., Nachman, R., Cerrina, F. (1993) Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors. Applied Physics Letters, 63 (12). 1646-1647 doi:10.1063/1.110723
Kobayashi, Keiji (1987) Polarizable capacitance versus voltage characteristics for metal, oxide, and silicon capacitors passivated by various oxide glasses. Applied Physics Letters, 51 (20). 1600-1601 doi:10.1063/1.98567
Avni, E., Shappir, J. (1987) Oxide trapping under spatially variable oxide electric field in the metal‐oxide‐silicon structure. Applied Physics Letters, 51 (6). 463-465 doi:10.1063/1.98423
Krick, J. T., Lenahan, P. M., Dunn, G. J. (1991) Direct observation of interfacial point defects generated by channel hot hole injection inn‐channel metal oxide silicon field effect transistors. Applied Physics Letters, 59 (26). 3437-3439 doi:10.1063/1.105699
 
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