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Temkin, H., Harriott, L. R., Panish, M. B. (1988) Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography. Applied Physics Letters, 52 (18). 1478-1480 doi:10.1063/1.99104

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Reference TypeJournal (article/letter/editorial)
TitleUltrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography
JournalApplied Physics Letters
AuthorsTemkin, H.Author
Harriott, L. R.Author
Panish, M. B.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99104Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482913Long-form Identifiermindat:1:5:8482913:5
GUID0
Full ReferenceTemkin, H., Harriott, L. R., Panish, M. B. (1988) Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography. Applied Physics Letters, 52 (18). 1478-1480 doi:10.1063/1.99104
Plain TextTemkin, H., Harriott, L. R., Panish, M. B. (1988) Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography. Applied Physics Letters, 52 (18). 1478-1480 doi:10.1063/1.99104
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Wang, Y. L., Temkin, H., Harriott, L. R., Hamm, R. A., Weiner, J. S. (1990) Vacuum lithography forinsitufabrication of buried semiconductor microstructures. Applied Physics Letters, 57 (16). 1672-1674 doi:10.1063/1.104082
Temkin, H., Harriott, L. R., Hamm, R. A., Weiner, J., Panish, M. B. (1989) Insitupattern formation and high quality overgrowth by gas source molecular beam epitaxy. Applied Physics Letters, 54 (15). 1463-1465 doi:10.1063/1.101377
Wang, Y. L., Harriott, L. R., Hamm, R. A., Temkin, H. (1990) Role of native oxide layers in the patterning of InP by Ga ion beam writing and ion beam assisted Cl2etching. Applied Physics Letters, 56 (8). 749-751 doi:10.1063/1.102701
Gershoni, D., Temkin, H., Panish, M. B. (1988) Strained‐layer Ga1−xInxAs/InP avalanche photodetectors. Applied Physics Letters, 53 (14). 1294-1296 doi:10.1063/1.100001
Choquette, Kent D., Harriott, Lloyd R. (1993) Dry lithography using focused ion beam implantation and reactive ion etching of SiO2. Applied Physics Letters, 62 (25). 3294-3296 doi:10.1063/1.109623
Matsui, Shinji, Kojima, Yoshikatsu, Ochiai, Yukinori (1988) High‐resolution focused ion beam lithography. Applied Physics Letters, 53 (10). 868-870 doi:10.1063/1.100098
Nottenburg, R. N., Temkin, H., Panish, M. B., Hamm, R. A. (1986) High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy. Applied Physics Letters, 49 (17). 1112-1114 doi:10.1063/1.97438
Erdmanis, M., Tittonen, I. (2014) Focused ion beam high resolution grayscale lithography for silicon-based nanostructures. Applied Physics Letters, 104 (7). 73118pp. doi:10.1063/1.4866586
Cotta, M. A., Hamm, R. A., Staley, T. W., Chu, S. N. G., Harriott, L. R., Panish, M. B., Temkin, H. (1993) Kinetic surface roughening in molecular beam epitaxy of InP. Physical Review Letters, 70 (26). 4106-4109 doi:10.1103/physrevlett.70.4106
Cotta, M. A., Hamm, R. A., Chu, S. N. G., Harriott, L. R., Temkin, H. (1995) On the origin of oval defects in metalorganic molecular beam epitaxy of InP. Applied Physics Letters, 66 (18). 2358-2360 doi:10.1063/1.113982
Vandenberg, J. M., Panish, M. B., Temkin, H., Hamm, R. A. (1988) Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction. Applied Physics Letters, 53 (20). 1920-1922 doi:10.1063/1.100345
 
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