Hagen, S. H., van ’t Blik, H. F. J., Boermans, M. J. B., Eppenga, R. (1988) Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (24). 2015-2016 doi:10.1063/1.99567

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Reference Type	Journal (article/letter/editorial)
Title	Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy
Journal	Applied Physics Letters
Authors	Hagen, S. H.		Author
	van ’t Blik, H. F. J.		Author
	Boermans, M. J. B.		Author
	Eppenga, R.		Author
Year	1988 (June 13)	Volume	52
Issue	24
Publisher	AIP Publishing
DOI	doi:10.1063/1.99567Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8483336	Long-form Identifier	mindat:1:5:8483336:9
GUID	0
Full Reference	Hagen, S. H., van ’t Blik, H. F. J., Boermans, M. J. B., Eppenga, R. (1988) Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (24). 2015-2016 doi:10.1063/1.99567
Plain Text	Hagen, S. H., van ’t Blik, H. F. J., Boermans, M. J. B., Eppenga, R. (1988) Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (24). 2015-2016 doi:10.1063/1.99567
In	(1988, June) Applied Physics Letters Vol. 52 (24) AIP Publishing

	Wang, C. A., Walpole, J. N., Missaggia, L. J., Donnelly, J. P., Choi, H. K. (1991) AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 58 (20). 2208-2210 doi:10.1063/1.104928
	Choi, H. K., Lee, J. W., Salerno, J. P., Connors, M. K., Tsaur, B‐Y., Fan, J. C. C. (1988) Low‐threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters, 52 (14). 1114-1115 doi:10.1063/1.99178
	Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., Park, Y. J. (2005) Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 87 (2). 21903pp. doi:10.1063/1.1993758
	Stützler, F. J., Fujieda, S., Mizuta, M., Ishida, K. (1988) Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As‐GaAs single quantum well interfaces. Applied Physics Letters, 53 (20). 1923-1925 doi:10.1063/1.100346
	Joma, M., Horikawa, H., Matsui, Y., Kamijoh, T. (1991) High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 58 (20). 2220-2222 doi:10.1063/1.104932
	Hagen, S. H., Valster, A., Boermans, M. J. B., van der Heyden, J. (1990) Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double‐heterostructure lasers. Applied Physics Letters, 57 (22). 2291-2293 doi:10.1063/1.103891
	Tanbun‐Ek, T., Logan, R. A., Temkin, H., Berthold, K., Levi, A. F. J., Chu, S. N. G. (1989) Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 55 (22). 2283-2285 doi:10.1063/1.102038
	Roberts, J. S., Green, R. P., Wilson, L. R., Zibik, E. A., Revin, D. G., Cockburn, J. W., Airey, R. J. (2003) Quantum cascade lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 82 (24). 4221-4223 doi:10.1063/1.1583858
	Botha, J. R., Leitch, A. W. R. (1993) Photoluminescence of hydrogenated GaAs/AlGaAs quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 63 (18). 2534-2536 doi:10.1063/1.110450
	Ishiguro, H., Kawabata, T., Koike, S. (1988) InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition. Applied Physics Letters, 52 (25). 2099-2101 doi:10.1063/1.99547
	Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599

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