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Ogura, Atsushi, Aizaki, Naoaki, Terao, Hiroshi (1988) Grain growth of 〈100〉 textured Ge on a SiO2/Si3N4stripe. Applied Physics Letters, 53 (1). 22-24 doi:10.1063/1.100570

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Reference TypeJournal (article/letter/editorial)
TitleGrain growth of 〈100〉 textured Ge on a SiO2/Si3N4stripe
JournalApplied Physics Letters
AuthorsOgura, AtsushiAuthor
Aizaki, NaoakiAuthor
Terao, HiroshiAuthor
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100570Search in ResearchGate
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Mindat Ref. ID8483992Long-form Identifiermindat:1:5:8483992:9
GUID0
Full ReferenceOgura, Atsushi, Aizaki, Naoaki, Terao, Hiroshi (1988) Grain growth of 〈100〉 textured Ge on a SiO2/Si3N4stripe. Applied Physics Letters, 53 (1). 22-24 doi:10.1063/1.100570
Plain TextOgura, Atsushi, Aizaki, Naoaki, Terao, Hiroshi (1988) Grain growth of 〈100〉 textured Ge on a SiO2/Si3N4stripe. Applied Physics Letters, 53 (1). 22-24 doi:10.1063/1.100570
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Ogura, Atsushi, Aizaki, Naoaki, Terao, Hiroshi (1989) High‐speed video observation of laser recrystallization for semiconductor‐on‐insulator fabrication. Journal of Applied Physics, 65 (2). 752-754 doi:10.1063/1.343089
Ogura, Atushi, Terao, Hiroshi (1987) Grain growth observation of 〈100〉 textured germanium film by transmission electron microscopy. Applied Physics Letters, 50 (1). 16-18 doi:10.1063/1.98124
Ogura, Atsushi, Aizaki, Naoaki (1989) Si/SiO2interface structures in laser‐recrystallized Si on SiO2. Applied Physics Letters, 55 (6). 547-549 doi:10.1063/1.102433
Hirayama, Hiroyuki, Tatsumi, Toru, Ogura, Atsushi, Aizaki, Naoaki (1987) Gas source silicon molecular beam epitaxy using silane. Applied Physics Letters, 51 (26). 2213-2215 doi:10.1063/1.99009
Egami, Koji, Ogura, Atsushi, Kimura, Masakazu (1986) Low‐temperature grain growth of initially 〈100〉 textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle. Journal of Applied Physics, 59 (1). 289-291 doi:10.1063/1.336831
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Selective growth condition in disilane gas source silicon molecular beam epitaxy. Applied Physics Letters, 52 (26). 2242-2243 doi:10.1063/1.99654
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films. Applied Physics Letters, 52 (16). 1335-1337 doi:10.1063/1.99151
Ogura, Atsushi, Terao, Hiroshi (1987) Observation on laser‐annealed silicon‐on‐insulator structures by cross‐sectional transmission electron microscopy. Journal of Applied Physics, 62 (10). 4170-4173 doi:10.1063/1.339136
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Gas source silicon molecular beam epitaxy using disilane. Applied Physics Letters, 52 (18). 1484-1486 doi:10.1063/1.99106
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
Mori, Kazuo, Yoshida, Masaji, Usui, Akira, Terao, Hiroshi (1988) GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Applied Physics Letters, 52 (1). 27-29 doi:10.1063/1.99306
 
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