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Sircar, P. (1988) Growth of CdTe on GaAs by electrodeposition from an aqueous electrolyte. Applied Physics Letters, 53 (13). 1184-1185 doi:10.1063/1.100016

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of CdTe on GaAs by electrodeposition from an aqueous electrolyte
JournalApplied Physics Letters
AuthorsSircar, P.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100016Search in ResearchGate
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Mindat Ref. ID8484233Long-form Identifiermindat:1:5:8484233:0
GUID0
Full ReferenceSircar, P. (1988) Growth of CdTe on GaAs by electrodeposition from an aqueous electrolyte. Applied Physics Letters, 53 (13). 1184-1185 doi:10.1063/1.100016
Plain TextSircar, P. (1988) Growth of CdTe on GaAs by electrodeposition from an aqueous electrolyte. Applied Physics Letters, 53 (13). 1184-1185 doi:10.1063/1.100016
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

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Reno, J. L., Gourley, P. L., Monfroy, G., Faurie, J. P. (1988) Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100). Applied Physics Letters, 53 (18). 1747-1749 doi:10.1063/1.99777
Price, G. L. (1988) Growth of highly strained InGaAs on GaAs. Applied Physics Letters, 53 (14). 1288-1290 doi:10.1063/1.100000
Chen, J. C., Bush, P., Chen, W. K., Liu, Pao‐Lo (1988) Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 773-775 doi:10.1063/1.99829
Takahashi, Makoto, Todorobaru, Makoto, Wakita, Koichi, Uosaki, Kohei (2002) Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition. Applied Physics Letters, 80 (12). 2117-2119 doi:10.1063/1.1463718
Gu, Jyongsil, Kitahara, Toshiyuki, Kawakami, Kouichi, Sakaguchi, Tadao (1975) Ohmic contact and impurity conduction in P−doped CdTe. Journal of Applied Physics, 46 (3). 1184-1185 doi:10.1063/1.322220
Faschinger, W., Sitter, H., Juza, P. (1988) Atomic‐layer epitaxy of (111)CdTe on BaF2substrates. Applied Physics Letters, 53 (25). 2519-2521 doi:10.1063/1.100529
Dubowski, J. J., Williams, D. F., Sewell, P. B., Norman, P. (1985) Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporation. Applied Physics Letters, 46 (11). 1081-1083 doi:10.1063/1.95768
Cheung, J. T., Khoshnevisan, M., Magee, T. (1983) Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition. Applied Physics Letters, 43 (5). 462-464 doi:10.1063/1.94389
Ghandhi, S. K., Ayers, J. E. (1988) Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy. Applied Physics Letters, 53 (13). 1204-1206 doi:10.1063/1.100020
Palmstro/m, C. J., Tabatabaie, N., Allen, S. J. (1988) Epitaxial growth of ErAs on (100)GaAs. Applied Physics Letters, 53 (26). 2608-2610 doi:10.1063/1.100173
Ghandhi, Sorab K., Taskar, Nikhil R., Bhat, Ishwara B. (1985) Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy. Applied Physics Letters, 47 (7). 742-745 doi:10.1063/1.96024
 
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