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Jeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen plasma induced defects in silicon
JournalApplied Physics Letters
AuthorsJeng, S. J.Author
Oehrlein, G. S.Author
Scilla, G. J.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99810Search in ResearchGate
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Mindat Ref. ID8484643Long-form Identifiermindat:1:5:8484643:3
GUID0
Full ReferenceJeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810
Plain TextJeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

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Oehrlein, Gottlieb S., Scilla, Gerald J., Jeng, Shwu‐Jen (1988) Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces. Applied Physics Letters, 52 (11). 907-909 doi:10.1063/1.99269
Jeng, S. J., Oehrlein, G. S. (1987) Microstructural studies of reactive ion etched silicon. Applied Physics Letters, 50 (26). 1912-1914 doi:10.1063/1.97684
Weman, H., Lindström, J. L., Oehrlein, G. S., Svensson, B. G. (1990) Reactive‐ion‐ and plasma‐etching‐induced extended defects in silicon studied with photoluminescence. Journal of Applied Physics, 67 (2). 1013-1021 doi:10.1063/1.345784
Lindström, J. L., Oehrlein, G. S., Scilla, G. J., Yapsir, A. S., Corbett, J. W. (1989) Effects of deuterium plasmas on silicon near‐surface properties. Journal of Applied Physics, 65 (8). 3297-3300 doi:10.1063/1.342666
Borenstein, J. T., Jones, J. T., Corbett, J. W., Oehrlein, G. S., Kleinhenz, R. L. (1986) Quenched‐in defects in flashlamp‐annealed silicon. Applied Physics Letters, 49 (4). 199-200 doi:10.1063/1.97169
Weman, H., Monemar, B., Oehrlein, G. S., Jeng, S. J. (1990) Strain-induced quantum confinement of carriers due to extended defects in silicon. Physical Review B, 42 (5) 3109-3112 doi:10.1103/physrevb.42.3109
Iyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420
Buyanova, I. A., Henry, A., Monemar, B., Lindström, J. L., Oehrlein, G. S. (1995) Photoluminescence of defects induced in silicon by SF6/O2reactive‐ion etching. Journal of Applied Physics, 78 (5). 3348-3352 doi:10.1063/1.360711
Kroesen, G. M. W., Oehrlein, G. S., de Frésart, E., Scilla, G. J. (1992) Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration. Applied Physics Letters, 60 (11). 1351-1353 doi:10.1063/1.107314
Kumar, S. N., Chaussemy, G., Canut, B., Laugier, A. (1988) Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon. Applied Physics Letters, 53 (22). 2167-2169 doi:10.1063/1.100414
Marwick, A. D., Oehrlein, G. S., Wittmer, M. (1991) High hydrogen concentrations produced by segregation intop+layers in silicon. Applied Physics Letters, 59 (2). 198-200 doi:10.1063/1.105964
 
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