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Kumar, S. N., Chaussemy, G., Canut, B., Laugier, A. (1988) Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon. Applied Physics Letters, 53 (22). 2167-2169 doi:10.1063/1.100414

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Reference TypeJournal (article/letter/editorial)
TitleEvidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon
JournalApplied Physics Letters
AuthorsKumar, S. N.Author
Chaussemy, G.Author
Canut, B.Author
Laugier, A.Author
Year1988 (November 28)Volume53
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.100414Search in ResearchGate
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Mindat Ref. ID8484996Long-form Identifiermindat:1:5:8484996:2
GUID0
Full ReferenceKumar, S. N., Chaussemy, G., Canut, B., Laugier, A. (1988) Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon. Applied Physics Letters, 53 (22). 2167-2169 doi:10.1063/1.100414
Plain TextKumar, S. N., Chaussemy, G., Canut, B., Laugier, A. (1988) Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon. Applied Physics Letters, 53 (22). 2167-2169 doi:10.1063/1.100414
In(1988, November) Applied Physics Letters Vol. 53 (22) AIP Publishing

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Chaussemy, G., Gontrand, C., Kumar, S. N., Canut, B., Barbier, D., Laugier, A. (1991) Rapid Thermal Annealing of Arsenic Implanted Monocrystalline Silicon. physica status solidi (a), 124 (1). 103-114 doi:10.1002/pssa.2211240108
Kumar, S.N., Chaussemy, G., Cauut, B., Barbier, D., Laugier, A. (1989) Outdiffusion modelling of arsenic from As+ implanted crystalline p-type silicon during rapid thermal annealing. Applied Surface Science, 36. 545-553 doi:10.1016/0169-4332(89)90949-5
Almaggoussi, A., Sicart, J., Robert, J. L., Chaussemy, G., Laugier, A. (1990) Electrically inactive grain boundaries in rapid thermal annealed boron‐implanted polycrystalline silicon films. Applied Physics Letters, 56 (25). 2536-2538 doi:10.1063/1.102879
Wu, N. R., Sadana, D. K., Washburn, J. (1984) Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon. Applied Physics Letters, 44 (8). 782-784 doi:10.1063/1.94917
Sicart, J., Jeanjean, P., Sellitto, P., Robert, J. L., Chaussemy, G., Laugier, A. (1992) Two‐step rapid thermal annealing of B‐ and As‐implanted polycrystalline silicon films. Journal of Applied Physics, 71 (1). 273-276 doi:10.1063/1.350699
Marrakchi, G., Joly, J.F., Vincent, F., Chaussemy, G., Laugier, A., Guillot, G. (1989) Characteristics of electron traps in rapidly thermal annealed GaAs using a capping proximity technique. Applied Surface Science, 36. 564-571 doi:10.1016/0169-4332(89)90951-3
Jeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810
Sobolev, N. A., Gusev, O. B., Shek, E. I., Vdovin, V. I., Yugova, T. G., Emel’yanov, A. M. (1998) Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature. Applied Physics Letters, 72 (25). 3326-3328 doi:10.1063/1.121593
Almaggoussi, A., Sicart, J., Robert, J. L., Chaussemy, G., Laugier, A. (1989) Electrical properties of highly boron‐implanted polycrystalline silicon after rapid or conventional thermal annealing. Journal of Applied Physics, 66 (9). 4301-4304 doi:10.1063/1.343975
Krause, S. J., Jung, C. O., Wilson, S. R. (1988) Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material. Applied Physics Letters, 53 (1). 63-65 doi:10.1063/1.100568
Hsu, S. N., Chen, L. J. (1989) Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high‐dose As+‐implanted (001) Si. Applied Physics Letters, 55 (22). 2304-2306 doi:10.1063/1.102045
 
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