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Iyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420

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Reference TypeJournal (article/letter/editorial)
TitleOrigin and reduction of interfacial boron spikes in silicon molecular beam epitaxy
JournalApplied Physics Letters
AuthorsIyer, S. S.Author
Delage, S. L.Author
Scilla, G. J.Author
Year1988 (February 8)Volume52
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.99420Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483704Long-form Identifiermindat:1:5:8483704:6
GUID0
Full ReferenceIyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420
Plain TextIyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420
In(1988, February) Applied Physics Letters Vol. 52 (6) AIP Publishing

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Delage, S. L., Jeng, S.‐J., Jousse, D., Iyer, S. S. (1988) High conductivity polycrystalline silicon obtained by molecular beam deposition. Applied Physics Letters, 52 (12). 999-1001 doi:10.1063/1.99199
Pukite, P. R., Iyer, S. S., Scilla, G. J. (1989) Ion beam enhanced diffusion of B during Si molecular beam epitaxy. Applied Physics Letters, 54 (10). 916-918 doi:10.1063/1.100807
de Frésart, E., Wang, K. L., Rhee, S. S. (1988) Boron surface segregation in silicon molecular beam epitaxy. Applied Physics Letters, 53 (1). 48-50 doi:10.1063/1.100122
de Frésart, E., Rhee, S. S., Wang, K. L. (1986) Boron oxide interaction with silicon in silicon molecular beam epitaxy. Applied Physics Letters, 49 (14). 847-849 doi:10.1063/1.97513
Iyer, S. S., Metzger, R. A., Allen, F. G. (1981) Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy. Journal of Applied Physics, 52 (9). 5608-5613 doi:10.1063/1.329494
Jeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810
Thomas, O., Delage, S., d’Heurle, F. M., Scilla, G. (1989) Reaction of titanium with germanium and silicon‐germanium alloys. Applied Physics Letters, 54 (3). 228-230 doi:10.1063/1.101444
Lin, T. L., Chen, S. C., Kao, Y. C., Wang, K. L., Iyer, S. (1986) 100‐Όm‐wide silicon‐on‐insulator structures by Si molecular beam epitaxy growth on porous silicon. Applied Physics Letters, 48 (26). 1793-1795 doi:10.1063/1.96789
Bright, A. A., Iyer, S. S., Robey, S. W., Delage, S. L. (1988) Technique for selective etching of Si with respect to Ge. Applied Physics Letters, 53 (23). 2328-2329 doi:10.1063/1.100269
Tsang, J. C., Eberl, K., Zollner, S., Iyer, S. S. (1992) Raman spectroscopy of CySi1−yalloys grown by molecular beam epitaxy. Applied Physics Letters, 61 (8). 961-963 doi:10.1063/1.107742
Robbins, D. J., Pidduck, A. J., Glasper, J. L., Young, I. M. (1989) Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy. Applied Physics Letters, 55 (12). 1229-1231 doi:10.1063/1.101663
 
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