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Bright, A. A., Iyer, S. S., Robey, S. W., Delage, S. L. (1988) Technique for selective etching of Si with respect to Ge. Applied Physics Letters, 53 (23). 2328-2329 doi:10.1063/1.100269

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Reference TypeJournal (article/letter/editorial)
TitleTechnique for selective etching of Si with respect to Ge
JournalApplied Physics Letters
AuthorsBright, A. A.Author
Iyer, S. S.Author
Robey, S. W.Author
Delage, S. L.Author
Year1988 (December 5)Volume53
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.100269Search in ResearchGate
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Mindat Ref. ID8485067Long-form Identifiermindat:1:5:8485067:6
GUID0
Full ReferenceBright, A. A., Iyer, S. S., Robey, S. W., Delage, S. L. (1988) Technique for selective etching of Si with respect to Ge. Applied Physics Letters, 53 (23). 2328-2329 doi:10.1063/1.100269
Plain TextBright, A. A., Iyer, S. S., Robey, S. W., Delage, S. L. (1988) Technique for selective etching of Si with respect to Ge. Applied Physics Letters, 53 (23). 2328-2329 doi:10.1063/1.100269
In(1988, December) Applied Physics Letters Vol. 53 (23) AIP Publishing

See Also

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Tsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558
Copel, M., Tromp, R. M., Robey, S. W., Oehrlein, G. S. (1988) Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces. Applied Physics Letters, 53 (23). 2317-2319 doi:10.1063/1.100265
Delage, S. L., Jeng, S.‐J., Jousse, D., Iyer, S. S. (1988) High conductivity polycrystalline silicon obtained by molecular beam deposition. Applied Physics Letters, 52 (12). 999-1001 doi:10.1063/1.99199
Iyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420
Oehrlein, G. S., Bestwick, T. D., Jones, P. L., Corbett, J. W. (1990) Selective dry etching of silicon with respect to germanium. Applied Physics Letters, 56 (15). 1436-1438 doi:10.1063/1.102490
Oehrlein, Gottlieb S., Robey, Steve W., Lindström, J. Lennart (1988) Surface processes in CF4/O2reactive etching of silicon. Applied Physics Letters, 52 (14). 1170-1172 doi:10.1063/1.99195
GrĂŒtzmacher, D. A., Sedgwick, T. O., Powell, A., Tejwani, M., Iyer, S. S., Cotte, J., Cardone, F. (1993) Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere. Applied Physics Letters, 63 (18). 2531-2533 doi:10.1063/1.110449
Tai, K., McCall, S. L., Tsang, W. T. (1988) Optical fiber spatial filtering technique for investigating carrier dynamics. Applied Physics Letters, 53 (9). 737-739 doi:10.1063/1.99819
Chen, C. H., Chen, H. S., Liou, S. H. (1988) Microstructure of epitaxial YbBa2Cu3O7superconducting films grown by a new liquid‐gas‐solidification technique. Applied Physics Letters, 53 (23). 2339-2341 doi:10.1063/1.100518
Barnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891
Venkatasubramanian, R., Timmons, M. L., Colpitts, T. S. (1991) Selective plasma etching of Ge substrates for thin freestanding GaAs‐AlGaAs heterostructures. Applied Physics Letters, 59 (17). 2153-2155 doi:10.1063/1.106110
 
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