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Delage, S. L., Jeng, S.‐J., Jousse, D., Iyer, S. S. (1988) High conductivity polycrystalline silicon obtained by molecular beam deposition. Applied Physics Letters, 52 (12). 999-1001 doi:10.1063/1.99199

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Reference TypeJournal (article/letter/editorial)
TitleHigh conductivity polycrystalline silicon obtained by molecular beam deposition
JournalApplied Physics Letters
AuthorsDelage, S. L.Author
Jeng, S.‐J.Author
Jousse, D.Author
Iyer, S. S.Author
Year1988 (March 21)Volume52
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.99199Search in ResearchGate
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Mindat Ref. ID8482541Long-form Identifiermindat:1:5:8482541:2
GUID0
Full ReferenceDelage, S. L., Jeng, S.‐J., Jousse, D., Iyer, S. S. (1988) High conductivity polycrystalline silicon obtained by molecular beam deposition. Applied Physics Letters, 52 (12). 999-1001 doi:10.1063/1.99199
Plain TextDelage, S. L., Jeng, S.‐J., Jousse, D., Iyer, S. S. (1988) High conductivity polycrystalline silicon obtained by molecular beam deposition. Applied Physics Letters, 52 (12). 999-1001 doi:10.1063/1.99199
In(1988, March) Applied Physics Letters Vol. 52 (12) AIP Publishing

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Iyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420
Jousse, D., Delage, S. L., Iyer, S. S. (1991) Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams. Philosophical Magazine B, 63 (2). 443-455 doi:10.1080/13642819108205949
Bright, A. A., Iyer, S. S., Robey, S. W., Delage, S. L. (1988) Technique for selective etching of Si with respect to Ge. Applied Physics Letters, 53 (23). 2328-2329 doi:10.1063/1.100269
Iyer, S. S., Metzger, R. A., Allen, F. G. (1981) Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy. Journal of Applied Physics, 52 (9). 5608-5613 doi:10.1063/1.329494
Lin, T. L., Chen, S. C., Kao, Y. C., Wang, K. L., Iyer, S. (1986) 100‐μm‐wide silicon‐on‐insulator structures by Si molecular beam epitaxy growth on porous silicon. Applied Physics Letters, 48 (26). 1793-1795 doi:10.1063/1.96789
Tsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558
Tsang, J. C., Eberl, K., Zollner, S., Iyer, S. S. (1992) Raman spectroscopy of CySi1−yalloys grown by molecular beam epitaxy. Applied Physics Letters, 61 (8). 961-963 doi:10.1063/1.107742
Jeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810
Kwok, H. S., Zheng, J. P., Witanachchi, S., Shi, L., Shaw, D. T. (1988) Growth of CdSxSe1−xthin films by laser evaporation deposition. Applied Physics Letters, 52 (21). 1815-1816 doi:10.1063/1.99657
Todorov, S. S., Fossum, E. R. (1988) Oxidation of silicon by a low‐energy ion beam: Experiment and model. Applied Physics Letters, 52 (1). 48-50 doi:10.1063/1.99313
de Frésart, E., Wang, K. L., Rhee, S. S. (1988) Boron surface segregation in silicon molecular beam epitaxy. Applied Physics Letters, 53 (1). 48-50 doi:10.1063/1.100122
 
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