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Restle, Phillip (1988) Individual oxide traps as probes into submicron devices. Applied Physics Letters, 53 (19). 1862-1864 doi:10.1063/1.100378

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Reference TypeJournal (article/letter/editorial)
TitleIndividual oxide traps as probes into submicron devices
JournalApplied Physics Letters
AuthorsRestle, PhillipAuthor
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100378Search in ResearchGate
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Mindat Ref. ID8484667Long-form Identifiermindat:1:5:8484667:3
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Full ReferenceRestle, Phillip (1988) Individual oxide traps as probes into submicron devices. Applied Physics Letters, 53 (19). 1862-1864 doi:10.1063/1.100378
Plain TextRestle, Phillip (1988) Individual oxide traps as probes into submicron devices. Applied Physics Letters, 53 (19). 1862-1864 doi:10.1063/1.100378
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

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Johnson, T. H., Cartland, H. E. (1988) Electron densities in xenon chloride laser mixtures. Applied Physics Letters, 52 (22). 1862-1864 doi:10.1063/1.99608
Herzog, M., Koch, F. (1988) Hot‐carrier light emission from silicon metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (26). 2620-2622 doi:10.1063/1.100177
Yonamoto, Yoshiki, Akamatsu, Naotoshi (2011) Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 98 (10). 103513pp. doi:10.1063/1.3559223
Schwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
Manalis, Scott, Babcock, Kenneth, Massie, James, Elings, Virgil, Dugas, Matthew (1995) Submicron studies of recording media using thin‐film magnetic scanning probes. Applied Physics Letters, 66 (19). 2585-2587 doi:10.1063/1.113509
Fleetwood, D. M. (1989) Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices. Applied Physics Letters, 55 (5). 466-468 doi:10.1063/1.101854
Gramsch, E., Throwe, J., Lynn, K. G. (1987) Development of transmission positron moderators. Applied Physics Letters, 51 (22). 1862-1864 doi:10.1063/1.98495
Nishioka, Yasushiro, Ma, T. P. (1988) Interface traps at midgap during defect transformation in (100) Si/SiO2. Applied Physics Letters, 53 (18). 1744-1746 doi:10.1063/1.99776
Slaoui, A., Fogarassy, E., White, C. W., Siffert, P. (1988) Infrared characterization of UV laser‐induced silicon oxide films. Applied Physics Letters, 53 (19). 1832-1834 doi:10.1063/1.100482
Tsubaki, Kotaro, Tokura, Yasuhiro (1988) Coherence length in quantum interference devices having periodic potential. Applied Physics Letters, 53 (10). 859-861 doi:10.1063/1.100095
Morales, P., DiCiano, M., Wei, J. Y. T. (2005) Selective epitaxial growth of submicron complex oxide structures by amorphous SrTiO3. Applied Physics Letters, 86 (19). 192509pp. doi:10.1063/1.1925781
 
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