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Bhattacharya, Enakshi, Mahan, A. H., Crandall, Richard S., Pankove, J. I. (1989) Critical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon. Applied Physics Letters, 54 (13). 1247-1249 doi:10.1063/1.100729

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Reference TypeJournal (article/letter/editorial)
TitleCritical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon
JournalApplied Physics Letters
AuthorsBhattacharya, EnakshiAuthor
Mahan, A. H.Author
Crandall, Richard S.Author
Pankove, J. I.Author
Year1989 (March 27)Volume54
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100729Search in ResearchGate
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Mindat Ref. ID8486103Long-form Identifiermindat:1:5:8486103:4
GUID0
Full ReferenceBhattacharya, Enakshi, Mahan, A. H., Crandall, Richard S., Pankove, J. I. (1989) Critical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon. Applied Physics Letters, 54 (13). 1247-1249 doi:10.1063/1.100729
Plain TextBhattacharya, Enakshi, Mahan, A. H., Crandall, Richard S., Pankove, J. I. (1989) Critical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon. Applied Physics Letters, 54 (13). 1247-1249 doi:10.1063/1.100729
In(1989, March) Applied Physics Letters Vol. 54 (13) AIP Publishing

See Also

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Bhattacharya, Enakshi, Mahan, A. H. (1988) Microstructure and the light‐induced metastability in hydrogenated amorphous silicon. Applied Physics Letters, 52 (19). 1587-1589 doi:10.1063/1.99089
Bhattacharya, E., Pankove, J. I., Deb, S. K. (1987) Electric field and infrared‐induced recovery of metastability in amorphous hydrogenated silicon. Applied Physics Letters, 51 (13). 998-1000 doi:10.1063/1.98788
Pankove, J. I., Berkeyheiser, J. E. (1980) Light‐induced radiative recombination centers in hydrogenated amorphous silicon. Applied Physics Letters, 37 (8). 705-706 doi:10.1063/1.92052
Okushi, Hideyo, Furui, Tatsuya, Banerjee, Ratnabali, Tanaka, Kazunobu (1989) Light‐induced changes of gap‐state profile in phosphorus‐doped hydrogenated amorphous silicon. Applied Physics Letters, 54 (5). 439-441 doi:10.1063/1.100945
Lee, S., Gunes, M., Wronski, C. R., Maley, N., Bennett, M. (1991) Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub‐band‐gap photoconductivity. Applied Physics Letters, 59 (13). 1578-1580 doi:10.1063/1.106289
Crandall, Richard S. (1980) Band-Tail Absorption in Hydrogenated Amorphous Silicon. Physical Review Letters, 44 (19). 1298 doi:10.1103/physrevlett.44.1298
Crandall, Richard S., Balberg, I. (1991) Mobility‐lifetime products in hydrogenated amorphous silicon. Applied Physics Letters, 58 (5). 508-510 doi:10.1063/1.104622
Crandall, Richard S. (1980) Band-Tail Absorption in Hydrogenated Amorphous Silicon. Physical Review Letters, 44 (11). 749-752 doi:10.1103/physrevlett.44.749
Su, Tining, Taylor, P. C., Chen, Shenlin, Crandall, R. S., Mahan, A. H. (2000) Ortho-molecular hydrogen in hydrogenated amorphous silicon. Applied Physics Letters, 76 (5). 565-567 doi:10.1063/1.125818
Zarnani, H., Yu, Z. Q., Collins, G. J., Bhattacharya, E., Pankove, J. I. (1988) Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon. Applied Physics Letters, 53 (14). 1314-1316 doi:10.1063/1.100007
Crandall, Richard S. (1983) Photocapacitance of mobile carriers in hydrogenated amorphous silicon solar cells. Applied Physics Letters, 42 (5). 451-453 doi:10.1063/1.93967
 
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