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Bhattacharya, E., Pankove, J. I., Deb, S. K. (1987) Electric field and infrared‐induced recovery of metastability in amorphous hydrogenated silicon. Applied Physics Letters, 51 (13). 998-1000 doi:10.1063/1.98788

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Reference TypeJournal (article/letter/editorial)
TitleElectric field and infrared‐induced recovery of metastability in amorphous hydrogenated silicon
JournalApplied Physics Letters
AuthorsBhattacharya, E.Author
Pankove, J. I.Author
Deb, S. K.Author
Year1987 (September 28)Volume51
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.98788Search in ResearchGate
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Mindat Ref. ID8481014Long-form Identifiermindat:1:5:8481014:6
GUID0
Full ReferenceBhattacharya, E., Pankove, J. I., Deb, S. K. (1987) Electric field and infrared‐induced recovery of metastability in amorphous hydrogenated silicon. Applied Physics Letters, 51 (13). 998-1000 doi:10.1063/1.98788
Plain TextBhattacharya, E., Pankove, J. I., Deb, S. K. (1987) Electric field and infrared‐induced recovery of metastability in amorphous hydrogenated silicon. Applied Physics Letters, 51 (13). 998-1000 doi:10.1063/1.98788
In(1987, September) Applied Physics Letters Vol. 51 (13) AIP Publishing

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Bhattacharya, Enakshi, Mahan, A. H., Crandall, Richard S., Pankove, J. I. (1989) Critical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon. Applied Physics Letters, 54 (13). 1247-1249 doi:10.1063/1.100729
Pankove, J. I., Berkeyheiser, J. E. (1980) Light‐induced radiative recombination centers in hydrogenated amorphous silicon. Applied Physics Letters, 37 (8). 705-706 doi:10.1063/1.92052
Bhattacharya, Enakshi, Mahan, A. H. (1988) Microstructure and the light‐induced metastability in hydrogenated amorphous silicon. Applied Physics Letters, 52 (19). 1587-1589 doi:10.1063/1.99089
Pankove, J. I., Carlson, D. E. (1977) Photoluminescence of hydrogenated amorphous silicon. Applied Physics Letters, 31 (7). 450-451 doi:10.1063/1.89737
Zarnani, H., Yu, Z. Q., Collins, G. J., Bhattacharya, E., Pankove, J. I. (1988) Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon. Applied Physics Letters, 53 (14). 1314-1316 doi:10.1063/1.100007
Pankove, J. I. (1978) Photoluminescence recovery in rehydrogenated amorphous silicon. Applied Physics Letters, 32 (12). 812-813 doi:10.1063/1.89925
Tsuo, Y. S., Smith, E. B., Deb, S. K. (1987) Ion beam hydrogenation of amorphous silicon. Applied Physics Letters, 51 (18). 1436-1438 doi:10.1063/1.98649
Pankove, J. I., Carlson, D. E. (1976) Electroluminescence in amorphous silicon. Applied Physics Letters, 29 (9). 620-622 doi:10.1063/1.89165
Street, R. A. (1991) Current‐induced defect creation and recovery in hydrogenated amorphous silicon. Applied Physics Letters, 59 (9). 1084-1086 doi:10.1063/1.106351
Eser, E., Urbanski, E. (1987) Photodegradation in hydrogenated amorphous silicon films at a high level of illumination. Applied Physics Letters, 51 (25). 2124-2126 doi:10.1063/1.98967
Abtew, T. A., Drabold, D. A., Taylor, P. C. (2005) Studies of silicon dihydride and its potential role in light-induced metastability in hydrogenated amorphous silicon. Applied Physics Letters, 86 (24). 241916pp. doi:10.1063/1.1943488
 
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