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Eser, E., Urbanski, E. (1987) Photodegradation in hydrogenated amorphous silicon films at a high level of illumination. Applied Physics Letters, 51 (25). 2124-2126 doi:10.1063/1.98967

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Reference TypeJournal (article/letter/editorial)
TitlePhotodegradation in hydrogenated amorphous silicon films at a high level of illumination
JournalApplied Physics Letters
AuthorsEser, E.Author
Urbanski, E.Author
Year1987 (December 21)Volume51
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.98967Search in ResearchGate
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Mindat Ref. ID8481844Long-form Identifiermindat:1:5:8481844:9
GUID0
Full ReferenceEser, E., Urbanski, E. (1987) Photodegradation in hydrogenated amorphous silicon films at a high level of illumination. Applied Physics Letters, 51 (25). 2124-2126 doi:10.1063/1.98967
Plain TextEser, E., Urbanski, E. (1987) Photodegradation in hydrogenated amorphous silicon films at a high level of illumination. Applied Physics Letters, 51 (25). 2124-2126 doi:10.1063/1.98967
In(1987, December) Applied Physics Letters Vol. 51 (25) AIP Publishing

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Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
Fang, P. H. (1988) Comment on ‘‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’’ [Appl. Phys. Lett.51, 2124 (1987)]. Applied Physics Letters, 53 (18). 1768 doi:10.1063/1.100394
Eser, E. (1986) Light‐induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon films. Journal of Applied Physics, 59 (10). 3508-3515 doi:10.1063/1.336822
Gau, S. C., Volltrauer, H., Faras, F., Delahoy, A. E., Eser, E., Kiss, Z. (1985) Manufacturing process for interconnected submodules of hydrogenated amorphous silicon photovoltaic panels. Applied Physics Letters, 47 (12). 1317-1319 doi:10.1063/1.96265
Bhattacharya, E., Pankove, J. I., Deb, S. K. (1987) Electric field and infrared‐induced recovery of metastability in amorphous hydrogenated silicon. Applied Physics Letters, 51 (13). 998-1000 doi:10.1063/1.98788
Yoshida, A., Setsune, K., Hirao, T. (1987) Phosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique. Applied Physics Letters, 51 (4). 253-255 doi:10.1063/1.98464
Michelson, C. E., Gelatos, A. V., Cohen, J. D. (1985) Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films. Applied Physics Letters, 47 (4). 412-414 doi:10.1063/1.96129
Stratakis, E., Spanakis, E., Tzanetakis, P., Fritzsche, H., Guha, S., Yang, J. (2002) Photoinduced stress in hydrogenated amorphous silicon films. Applied Physics Letters, 80 (10). 1734-1736 doi:10.1063/1.1458068
Wild, Ch., Koidl, P. (1987) Thermal gas effusion from hydrogenated amorphous carbon films. Applied Physics Letters, 51 (19). 1506-1508 doi:10.1063/1.98617
Schropp, R. E. I., Verwey, J. F. (1987) Instability mechanism in hydrogenated amorphous silicon thin‐film transistors. Applied Physics Letters, 50 (4). 185-187 doi:10.1063/1.97656
Sheng, Shuran, Kong, Guanglin, Liao, Xianbo (1996) Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature. Journal of Applied Physics, 80 (6). 3607-3609 doi:10.1063/1.363270
 
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