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Imamoto, H., Sato, F., Imanaka, K., Shimura, M. (1989) GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers. Applied Physics Letters, 54 (15). 1388-1390 doi:10.1063/1.100675

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Reference TypeJournal (article/letter/editorial)
TitleGaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers
JournalApplied Physics Letters
AuthorsImamoto, H.Author
Sato, F.Author
Imanaka, K.Author
Shimura, M.Author
Year1989 (April 10)Volume54
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.100675Search in ResearchGate
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Mindat Ref. ID8486205Long-form Identifiermindat:1:5:8486205:1
GUID0
Full ReferenceImamoto, H., Sato, F., Imanaka, K., Shimura, M. (1989) GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers. Applied Physics Letters, 54 (15). 1388-1390 doi:10.1063/1.100675
Plain TextImamoto, H., Sato, F., Imanaka, K., Shimura, M. (1989) GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers. Applied Physics Letters, 54 (15). 1388-1390 doi:10.1063/1.100675
In(1989, April) Applied Physics Letters Vol. 54 (15) AIP Publishing

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Sato, F., Imamoto, H., Asai, M., Inoue, T., Imanaka, K., Shimura, M. (1988) Low thermal expansion polymide buried ridge waveguide AlGaAs/GaAs single‐quantum‐well laser diode. Journal of Applied Physics, 63 (3). 964-966 doi:10.1063/1.340042
Sato, F., Imamoto, H., Imanaka, K., Shimura, M. (1989) High-quality AlGaAs/GaAs quantum well with a short period (InGaAs)(GaAs) strained superlattice buffer layer. Journal of Crystal Growth, 95 (1). 206-209 doi:10.1016/0022-0248(89)90384-9
Asai, M., Sato, F., Imamoto, H., Imanaka, K., Shimura, M. (1988) Low‐temperature (350 °C) growth of AlGaAs/GaAs laser diode by migration enhanced epitaxy. Journal of Applied Physics, 64 (1). 432-434 doi:10.1063/1.341211
Imamoto, H., Sato, F., Imanaka, K., Shimura, M. (1989) Migration‐enhanced epitaxy on a (111)Boriented GaAs substrate. Applied Physics Letters, 55 (2). 115-116 doi:10.1063/1.102119
Hayakawa, T., Suyama, T., Takahashi, K., Kondo, M., Yamamoto, S., Hijikata, T. (1986) Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)nsuperlattice quantum well. Applied Physics Letters, 49 (11). 636-638 doi:10.1063/1.97064
Watanabe, A., Yamada, T., Imanaka, K., Horikawa, H., Kawai, Y., Sakuta, M. (1985) AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure. Applied Physics Letters, 46 (11). 1023-1025 doi:10.1063/1.95798
Hayakawa, T., Suyama, T., Takahashi, K., Kondo, M., Yamamoto, S., Hijikata, T. (1987) Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm. Applied Physics Letters, 51 (10). 707-709 doi:10.1063/1.98895
Iwata, H., Yokoyama, H., Sugimoto, M., Hamao, N., Onabe, K. (1989) Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures. Applied Physics Letters, 54 (24). 2427-2428 doi:10.1063/1.101097
Tarucha, Seigo, Okamoto, Hiroshi (1986) Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure. Applied Physics Letters, 48 (1). 1-3 doi:10.1063/1.96776
Blood, P., Tsui, E. S‐M., Fletcher, E. D. (1989) Observations of barrier recombination in GaAs‐AlGaAs quantum well structures. Applied Physics Letters, 54 (22). 2218-2220 doi:10.1063/1.101129
Hayakawa, T., Matsumoto, K., Horie, H., Nagai, M., Morishima, M., Ishigame, Y., Isoyama, A. (1993) In0.2Ga0.8As single strained quantum well lasers with GaAs/AlGaAs short‐period superlattice barrier layers grown by molecular beam epitaxy. Journal of Applied Physics, 74 (8). 5285-5287 doi:10.1063/1.354274
 
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