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Iwata, H., Yokoyama, H., Sugimoto, M., Hamao, N., Onabe, K. (1989) Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures. Applied Physics Letters, 54 (24). 2427-2428 doi:10.1063/1.101097

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Reference TypeJournal (article/letter/editorial)
TitleReduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures
JournalApplied Physics Letters
AuthorsIwata, H.Author
Yokoyama, H.Author
Sugimoto, M.Author
Hamao, N.Author
Onabe, K.Author
Year1989 (June 12)Volume54
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.101097Search in ResearchGate
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Mindat Ref. ID8486989Long-form Identifiermindat:1:5:8486989:6
GUID0
Full ReferenceIwata, H., Yokoyama, H., Sugimoto, M., Hamao, N., Onabe, K. (1989) Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures. Applied Physics Letters, 54 (24). 2427-2428 doi:10.1063/1.101097
Plain TextIwata, H., Yokoyama, H., Sugimoto, M., Hamao, N., Onabe, K. (1989) Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures. Applied Physics Letters, 54 (24). 2427-2428 doi:10.1063/1.101097
In(1989, June) Applied Physics Letters Vol. 54 (24) AIP Publishing

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Hamao, N., Sugimoto, M., Kohmoto, S., Yokoyama, H. (1991) Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures. Applied Physics Letters, 59 (12). 1488-1490 doi:10.1063/1.105296
Yokoyama, H., Iwata, H., Sugimoto, M., Onabe, K., Lang, R. (1988) Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum‐well lasers through introduction of superlattice waveguide layers. Journal of Applied Physics, 63 (9). 4755-4758 doi:10.1063/1.340110
Hamao, N., Sugimoto, M., Takado, N., Tashiro, Y., Iwata, H., Yuasa, T., Asakawa, K. (1989) Surface‐emitting GaAs/AlGaAs lasers with dry‐etched 45° total reflection mirrors. Applied Physics Letters, 54 (24). 2389-2391 doi:10.1063/1.101087
Blood, P., Tsui, E. S‐M., Fletcher, E. D. (1989) Observations of barrier recombination in GaAs‐AlGaAs quantum well structures. Applied Physics Letters, 54 (22). 2218-2220 doi:10.1063/1.101129
Jelley, K. W., Engelmann, R. W. H., Alavi, K., Lee, H. (1989) Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters, 55 (1). 70-72 doi:10.1063/1.101757
Imamoto, H., Sato, F., Imanaka, K., Shimura, M. (1989) GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers. Applied Physics Letters, 54 (15). 1388-1390 doi:10.1063/1.100675
Dai, H. H., Choi, M. S., Gundersen, M. A., Lee, H. C., Dapkus, P. D., Myles, Charles W. (1989) Phonon‐assisted recombination in GaAs/AlGaAs multiple‐quantum‐well structures. Journal of Applied Physics, 66 (6). 2538-2541 doi:10.1063/1.344244
Kawanishi, H., Sugimoto, Y., Ishikawa, T., Hidaka, H. (1992) Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures. Applied Physics Letters, 60 (3). 365-367 doi:10.1063/1.106658
Yokoyama, H., Iwata, H., Onabe, K., Suzuki, T. (1988) Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells. Review of Scientific Instruments, 59 (4). 663-665 doi:10.1063/1.1139805
Hayakawa, T., Matsumoto, K., Horie, H., Nagai, M., Morishima, M., Ishigame, Y., Isoyama, A. (1993) In0.2Ga0.8As single strained quantum well lasers with GaAs/AlGaAs short‐period superlattice barrier layers grown by molecular beam epitaxy. Journal of Applied Physics, 74 (8). 5285-5287 doi:10.1063/1.354274
Sato, F., Imamoto, H., Imanaka, K., Shimura, M. (1989) High-quality AlGaAs/GaAs quantum well with a short period (InGaAs)(GaAs) strained superlattice buffer layer. Journal of Crystal Growth, 95 (1). 206-209 doi:10.1016/0022-0248(89)90384-9
 
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