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Jelley, K. W., Engelmann, R. W. H., Alavi, K., Lee, H. (1989) Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters, 55 (1). 70-72 doi:10.1063/1.101757

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Reference TypeJournal (article/letter/editorial)
TitleWell size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures
JournalApplied Physics Letters
AuthorsJelley, K. W.Author
Engelmann, R. W. H.Author
Alavi, K.Author
Lee, H.Author
Year1989 (July 3)Volume55
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.101757Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487687Long-form Identifiermindat:1:5:8487687:8
GUID0
Full ReferenceJelley, K. W., Engelmann, R. W. H., Alavi, K., Lee, H. (1989) Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters, 55 (1). 70-72 doi:10.1063/1.101757
Plain TextJelley, K. W., Engelmann, R. W. H., Alavi, K., Lee, H. (1989) Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters, 55 (1). 70-72 doi:10.1063/1.101757
In(1989, July) Applied Physics Letters Vol. 55 (1) AIP Publishing

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Wolf, T., Shieh, C.‐L., Engelmann, R., Alavi, K., Mantz, J. (1989) Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering. Applied Physics Letters, 55 (14). 1412-1414 doi:10.1063/1.101610
Lee, H. C., Dzurko, K. M., Dapkus, P. D., Garmire, E. (1987) Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate. Applied Physics Letters, 51 (20). 1582-1584 doi:10.1063/1.98561
Ribot, H., Lee, K. W., Simes, R. J., Yan, R. H., Coldren, L. A. (1989) Disordering of GaAs/AlGaAs multiple quantum well structures by thermal annealing for monolithic integration of laser and phase modulator. Applied Physics Letters, 55 (7). 672-674 doi:10.1063/1.101818
Goossen, K. W., Cunningham, J. E., Jan, W. Y. (1994) Electroabsorption in ultranarrow‐barrier GaAs/AlGaAs multiple quantum well modulators. Applied Physics Letters, 64 (9). 1071-1073 doi:10.1063/1.110935
Steijn, K. W., Leavitt, R. P., Little, J. W. (1989) Electroabsorption and electrorefraction in GaAs/AlGaAs waveguides containing asymmetric coupled quantum wells. Applied Physics Letters, 55 (4). 383-385 doi:10.1063/1.101878
Dai, H. H., Choi, M. S., Gundersen, M. A., Lee, H. C., Dapkus, P. D., Myles, Charles W. (1989) Phonon‐assisted recombination in GaAs/AlGaAs multiple‐quantum‐well structures. Journal of Applied Physics, 66 (6). 2538-2541 doi:10.1063/1.344244
Hattori, K., Tsujishita, M., Okamoto, H., Hamakawa, Y. (1989) Electroabsorption spectroscopy of amorphous Si/SiC quantum well structures. Applied Physics Letters, 55 (8). 763-765 doi:10.1063/1.101799
Whitehead, M., Parry, G., Woodbridge, K., Dobson, P. J., Duggan, G. (1988) Experimental confirmation of a sum rule for room‐temperature electroabsorption in GaAs‐AlGaAs multiple quantum well structures. Applied Physics Letters, 52 (5). 345-347 doi:10.1063/1.99459
Menkara, H. M., Wagner, B. K., Summers, C. J. (1995) Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures. Applied Physics Letters, 66 (14). 1764-1766 doi:10.1063/1.113360
Iwata, H., Yokoyama, H., Sugimoto, M., Hamao, N., Onabe, K. (1989) Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures. Applied Physics Letters, 54 (24). 2427-2428 doi:10.1063/1.101097
Ralston, J. D., Schaff, W. J., Bour, D. P., Eastman, L. F. (1989) Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides. Applied Physics Letters, 54 (6). 534-536 doi:10.1063/1.100922
 
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