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Wolf, T., Shieh, C.‐L., Engelmann, R., Alavi, K., Mantz, J. (1989) Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering. Applied Physics Letters, 55 (14). 1412-1414 doi:10.1063/1.101610

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Reference TypeJournal (article/letter/editorial)
TitleLateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering
JournalApplied Physics Letters
AuthorsWolf, T.Author
Shieh, C.‐L.Author
Engelmann, R.Author
Alavi, K.Author
Mantz, J.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101610Search in ResearchGate
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Mindat Ref. ID8488047Long-form Identifiermindat:1:5:8488047:3
GUID0
Full ReferenceWolf, T., Shieh, C.‐L., Engelmann, R., Alavi, K., Mantz, J. (1989) Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering. Applied Physics Letters, 55 (14). 1412-1414 doi:10.1063/1.101610
Plain TextWolf, T., Shieh, C.‐L., Engelmann, R., Alavi, K., Mantz, J. (1989) Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering. Applied Physics Letters, 55 (14). 1412-1414 doi:10.1063/1.101610
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Shieh, C., Engelmann, R., Mantz, J., Alavi, K., Shu, C. (1989) Cavity length dependence of threshold current for quantum well lasers. Applied Physics Letters, 54 (12). 1089-1091 doi:10.1063/1.100766
Jelley, K. W., Engelmann, R. W. H., Alavi, K., Lee, H. (1989) Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters, 55 (1). 70-72 doi:10.1063/1.101757
Hansen, S. I., Marsh, J. H., Roberts, J. S., Gwilliam, R. (1991) Refractive index changes in a GaAs multiple quantum well structure produced by impurity‐induced disordering using boron and fluorine. Applied Physics Letters, 58 (13). 1398-1400 doi:10.1063/1.104320
O’Neill, M., Bryce, A. C., Marsh, J. H., De La Rue, R. M., Roberts, J. S., Jeynes, C. (1989) Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity‐induced disordering. Applied Physics Letters, 55 (14). 1373-1375 doi:10.1063/1.101597
Hausken, T., Huang, T. C., Lee, K. W., Simes, R. J., Dagli, N., Coldren, L. A. (1988) Impurity‐induced‐disordered phase modulators in AlGaAs/GaAs quantum well and double‐heterostructure waveguides. Applied Physics Letters, 53 (9). 728-730 doi:10.1063/1.99816
Meehan, K., Brown, J. M., Holonyak, N., Burnham, R. D., Paoli, T. L., Streifer, W. (1984) Stripe‐geometry AlGaAs‐GaAs quantum‐well heterostructure lasers defined by impurity‐induced layer disordering. Applied Physics Letters, 44 (7). 700-702 doi:10.1063/1.94883
Shieh, C., Mantz, J., Lee, H., Ackley, D., Engelmann, R. (1989) Anomalous dependence of threshold current on stripe width in gain‐guided strained‐layer InGaAs/GaAs quantum well lasers. Applied Physics Letters, 54 (25). 2521-2523 doi:10.1063/1.101081
Ribot, H., Lee, K. W., Simes, R. J., Yan, R. H., Coldren, L. A. (1989) Disordering of GaAs/AlGaAs multiple quantum well structures by thermal annealing for monolithic integration of laser and phase modulator. Applied Physics Letters, 55 (7). 672-674 doi:10.1063/1.101818
Guido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096
Zou, W. X., Young, D. B., Law, K‐K., Merz, J. L. (1993) Low‐threshold InGaAs/GaAs/AlGaAs quantum‐well laser with an intracavity optical modulator by impurity‐induced disordering. Applied Physics Letters, 62 (6). 556-558 doi:10.1063/1.108909
Zarem, Hal A., Sercel, Peter C., Hoenk, Michael E., Lebens, John A., Vahala, Kerry J. (1989) Nanometer scale wire structures fabricated by diffusion‐induced selective disordering of a GaAs(AlGaAs) quantum well. Applied Physics Letters, 54 (26). 2692-2694 doi:10.1063/1.101037
 
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