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Kull, M., Coutaz, J. L., Manneberg, G., Grivickas, V. (1989) Absorption saturation and photodarkening in semiconductor‐doped glasses. Applied Physics Letters, 54 (19). 1830-1832 doi:10.1063/1.101249

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Reference TypeJournal (article/letter/editorial)
TitleAbsorption saturation and photodarkening in semiconductor‐doped glasses
JournalApplied Physics Letters
AuthorsKull, M.Author
Coutaz, J. L.Author
Manneberg, G.Author
Grivickas, V.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101249Search in ResearchGate
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Mindat Ref. ID8486527Long-form Identifiermindat:1:5:8486527:0
GUID0
Full ReferenceKull, M., Coutaz, J. L., Manneberg, G., Grivickas, V. (1989) Absorption saturation and photodarkening in semiconductor‐doped glasses. Applied Physics Letters, 54 (19). 1830-1832 doi:10.1063/1.101249
Plain TextKull, M., Coutaz, J. L., Manneberg, G., Grivickas, V. (1989) Absorption saturation and photodarkening in semiconductor‐doped glasses. Applied Physics Letters, 54 (19). 1830-1832 doi:10.1063/1.101249
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Roussignol, P., Kull, M., Ricard, D., de Rougemont, F., Frey, R., Flytzanis, C. (1989) Erratum: Time‐resolved direct observation of Auger recombination in semiconductor‐doped glasses [Appl. Phys. Lett. 51, 1882 (1987)]. Applied Physics Letters, 54 (17). 1705 doi:10.1063/1.101382
Van Wonterghem, B., Saltiel, S. M., Dutton, T. E., Rentzepis, P. M. (1989) Photodarkening effects in semiconductor‐doped glasses. Journal of Applied Physics, 66 (10). 4935-4940 doi:10.1063/1.343764
Grivickas, P., Grivickas, V., Linnros, J., Galeckas, A. (2007) Fundamental band edge absorption in nominally undoped and doped 4H‐SiC. Journal of Applied Physics, 101 (12). 123521pp. doi:10.1063/1.2749335
Roussignol, P., Kull, M., Ricard, D., de Rougemont, F., Frey, R., Flytzanis, C. (1987) Time‐resolved direct observation of Auger recombination in semiconductor‐doped glasses. Applied Physics Letters, 51 (23). 1882-1884 doi:10.1063/1.98499
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Yin, Y., Cooper, J. A., Neudeck, P. G., Balzan, M. L., Geissberger, A. E. (1989) Negative transconductance in a resistive gate metal‐semiconductor field‐effect transistor. Applied Physics Letters, 54 (19). 1884-1886 doi:10.1063/1.101230
Acioli, L. H., Gomes, A. S. L., Leite, J. R. Rios (1988) Measurement of high‐order optical nonlinear susceptibilities in semiconductor‐doped glasses. Applied Physics Letters, 53 (19). 1788-1790 doi:10.1063/1.99781
Zheng, J. P., Kwok, H. S. (1989) Ultrafast carrier dynamics in modified semiconductor‐doped glass. Applied Physics Letters, 54 (1). 1-3 doi:10.1063/1.100824
Ikonić, Z., Milanović, V., Tjapkin, D. (1989) Bound‐free intraband absorption in GaAs‐AlxGa1−xAs semiconductor quantum wells. Applied Physics Letters, 54 (3). 247-249 doi:10.1063/1.100979
Gulbinas, Karolis, Grivickas, Vytautas, Gavryushin, Vladimir (2014) Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation. Applied Physics Letters, 105 (24). 242107pp. doi:10.1063/1.4904884
 
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