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Jaffe, M., Oh, J. E., Pamulapati, J., Singh, J., Bhattacharya, P. (1989) In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures. Applied Physics Letters, 54 (23). 2345-2346 doi:10.1063/1.101121

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Reference TypeJournal (article/letter/editorial)
TitleIn‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures
JournalApplied Physics Letters
AuthorsJaffe, M.Author
Oh, J. E.Author
Pamulapati, J.Author
Singh, J.Author
Bhattacharya, P.Author
Year1989 (June 5)Volume54
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.101121Search in ResearchGate
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Mindat Ref. ID8486919Long-form Identifiermindat:1:5:8486919:7
GUID0
Full ReferenceJaffe, M., Oh, J. E., Pamulapati, J., Singh, J., Bhattacharya, P. (1989) In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures. Applied Physics Letters, 54 (23). 2345-2346 doi:10.1063/1.101121
Plain TextJaffe, M., Oh, J. E., Pamulapati, J., Singh, J., Bhattacharya, P. (1989) In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures. Applied Physics Letters, 54 (23). 2345-2346 doi:10.1063/1.101121
In(1989, June) Applied Physics Letters Vol. 54 (23) AIP Publishing

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Pamulapati, J., Oh, J. E., Debbar, N., Bhattacharya, P. (1989) A critical examination of the molecular‐beam‐epitaxial growth of InxGa1−xAs/GaAs strained quantum well structures. Journal of Applied Physics, 65 (3). 1361-1363 doi:10.1063/1.343006
Jaffe, Mark, Sekiguchi, Yoshihiko, Singh, Jasprit (1987) Theoretical formalism to understand the role of strain in the tailoring of hole masses inp‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors. Applied Physics Letters, 51 (23). 1943-1945 doi:10.1063/1.98308
Pamulapati, J., Berger, P., Chang, K., Oh, J., Chen, Yi, Singh, J., Bhattacharya, P., Gibala, R. (1989) Growth phenomena and characteristics of strained InxGa1−xAs on GaAs. Journal of Crystal Growth, 95 (1). 193-196 doi:10.1016/0022-0248(89)90380-1
Wang, P. J., Fang, F. F., Meyerson, B. S., Nocera, J., Parker, B. (1989) Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures. Applied Physics Letters, 54 (26). 2701-2703 doi:10.1063/1.101019
Chang, J. C. P., Chen, Jianhui, Fernandez, J. M., Wieder, H. H., Kavanagh, K. L. (1992) Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures. Applied Physics Letters, 60 (9). 1129-1131 doi:10.1063/1.106429
Zhang, K., Chen, Y. C., Singh, J., Bhattacharya, P. (1994) Reduction of Be out‐diffusion from heavily doped GaAs:Be layers by pseudomorphic InxGa1−xAs barrier layers. Applied Physics Letters, 65 (7). 872-874 doi:10.1063/1.112187
Hendriks, P., Schnitzeler, F. J. M., Haverkort, J. E. M., Wolter, J. H., de Kort, Kees, Weimann, G. (1989) Electro‐optic voltage profiling of modulation‐doped GaAs/AlGaAs heterostructures. Applied Physics Letters, 54 (18). 1763-1765 doi:10.1063/1.101284
Tober, R. L., Pamulapati, J., Oh, J. E., Bhattacharya, P. K. (1988) Piezoreflectance characterization of double‐barrier resonant tunneling structures. Applied Physics Letters, 53 (10). 883-885 doi:10.1063/1.100103
Zhou, X., Bhattacharya, P. K., Hugo, G., Hong, S. C., Gulari, E. (1989) Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. Applied Physics Letters, 54 (9). 855-856 doi:10.1063/1.100843
Wang, P. J., Meyerson, B. S., Fang, F. F., Nocera, J., Parker, B. (1989) High hole mobility in Si/Si1−xGex/Sip‐type modulation‐doped double heterostructures. Applied Physics Letters, 55 (22). 2333-2335 doi:10.1063/1.102274
Pamulapati, J., Lai, R., Ng, G. I., Chen, Y. C., Berger, P. R., Bhattacharya, P. K., Singh, J., Pavlidis, D. (1990) The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes. Journal of Applied Physics, 68 (1). 347-350 doi:10.1063/1.347140
 
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