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Yadava, R. D. S. (1989) Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices. Applied Physics Letters, 54 (9). 834-836 doi:10.1063/1.101414

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Reference TypeJournal (article/letter/editorial)
TitleScaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices
JournalApplied Physics Letters
AuthorsYadava, R. D. S.Author
Year1989 (February 27)Volume54
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.101414Search in ResearchGate
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Mindat Ref. ID8487631Long-form Identifiermindat:1:5:8487631:9
GUID0
Full ReferenceYadava, R. D. S. (1989) Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices. Applied Physics Letters, 54 (9). 834-836 doi:10.1063/1.101414
Plain TextYadava, R. D. S. (1989) Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices. Applied Physics Letters, 54 (9). 834-836 doi:10.1063/1.101414
In(1989, February) Applied Physics Letters Vol. 54 (9) AIP Publishing

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Fleetwood, D. M. (1989) Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices. Applied Physics Letters, 55 (5). 466-468 doi:10.1063/1.101854
DiMaria, D. J., Stathis, J. H. (1997) Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures. Applied Physics Letters, 70 (20). 2708-2710 doi:10.1063/1.118999
Fleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
Fleetwood, D. M. (2022) Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices. Applied Physics Letters, 121 (7) 70503 doi:10.1063/5.0105173
Pazos, S. M., Boyeras Baldomá, S., Aguirre, F. L., Krylov, I., Eizenberg, M., Palumbo, F. (2020) Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study. Journal of Applied Physics, 127 (17) 174101pp. doi:10.1063/1.5138922
Schwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
Shanker, D., Kar, S. (1983) The effect of illumination of inversion layer formation in metal‐thin oxide‐silicon devices. Journal of Applied Physics, 54 (2). 1124-1127 doi:10.1063/1.332130
Brożek, Tomasz, Viswanathan, Chand R. (1996) Simple method for evaluating process‐induced charging damage to the gate oxide of metal‐oxide‐semiconductor devices. Applied Physics Letters, 69 (12). 1770-1772 doi:10.1063/1.117480
Hokari, Yasuaki (1985) Oxide breakdown reliability degradation on Si‐gate metal‐oxide‐semiconductor structure by Al diffusion through polycrystalline silicon. Journal of Applied Physics, 58 (9). 3536-3540 doi:10.1063/1.335753
Swaminathan, Shankar, Shandalov, Michael, Oshima, Yasuhiro, McIntyre, Paul C. (2010) Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Applied Physics Letters, 96 (8). 82904pp. doi:10.1063/1.3313946
Faughnan, Brian W., Crandall, Richard S. (1977) Optical properties of mixed‐oxide WO3/MoO3electrochromic films. Applied Physics Letters, 31 (12). 834-836 doi:10.1063/1.89566
 
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