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Jones, P. L., Corbett, J. W. (1989) Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination. Applied Physics Letters, 55 (22). 2331-2332 doi:10.1063/1.102052

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of the electrical degradation of silicon Schottky contacts due to mercury contamination
JournalApplied Physics Letters
AuthorsJones, P. L.Author
Corbett, J. W.Author
Year1989 (November 27)Volume55
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.102052Search in ResearchGate
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Mindat Ref. ID8488711Long-form Identifiermindat:1:5:8488711:1
GUID0
Full ReferenceJones, P. L., Corbett, J. W. (1989) Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination. Applied Physics Letters, 55 (22). 2331-2332 doi:10.1063/1.102052
Plain TextJones, P. L., Corbett, J. W. (1989) Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination. Applied Physics Letters, 55 (22). 2331-2332 doi:10.1063/1.102052
In(1989, November) Applied Physics Letters Vol. 55 (22) AIP Publishing

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Eftekhari, G. (1990) Electrical Degradation of InP Schottky Barriers Due to Mercury Contamination. physica status solidi (a), 120 (2). doi:10.1002/pssa.2211200252
Oehrlein, G. S., Bestwick, T. D., Jones, P. L., Corbett, J. W. (1990) Selective dry etching of silicon with respect to germanium. Applied Physics Letters, 56 (15). 1436-1438 doi:10.1063/1.102490
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Hecht, M. H., Bell, L. D., Kaiser, W. J., Grunthaner, F. J. (1989) Ballistic‐electron‐emission microscopy investigation of Schottky barrier interface formation. Applied Physics Letters, 55 (8). 780-782 doi:10.1063/1.101778
Liliental‐Weber, Z., Newman, N., Washburn, J., Weber, E. R., Spicer, W. E. (1989) Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts. Applied Physics Letters, 54 (4). 356-358 doi:10.1063/1.100968
Waldrop, J. R. (1982) Interface chemistry and electrical properties of tungsten Schottky‐barrier contacts to GaAs. Applied Physics Letters, 41 (4). 350-352 doi:10.1063/1.93509
Lundberg, N., Östling, M. (1993) Formation and characterization of cobalt 6H‐silicon carbide Schottky contacts. Applied Physics Letters, 63 (22). 3069-3071 doi:10.1063/1.110261
Newman, N., Liliental‐Weber, Z., Weber, E. R., Washburn, J., Spicer, W. E. (1988) Schottky barrier instabilities due to contamination. Applied Physics Letters, 53 (2). 145-147 doi:10.1063/1.100351
Borenstein, J. T., Jones, J. T., Corbett, J. W., Oehrlein, G. S., Kleinhenz, R. L. (1986) Quenched‐in defects in flashlamp‐annealed silicon. Applied Physics Letters, 49 (4). 199-200 doi:10.1063/1.97169
Long, Pengyu, Huang, Jun Z., Jiang, Zhengping, Klimeck, Gerhard, Rodwell, Mark J. W., Povolotskyi, Michael (2016) Performance degradation of superlattice MOSFETs due to scattering in the contacts. Journal of Applied Physics, 120 (22). 224501pp. doi:10.1063/1.4971341
 
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