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(1989, August) Applied Physics Letters Vol. 55 (9) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1989 (August)Volume55
Issue<   9   >
PublisherAIP Publishing
Mindat Ref. ID8489435Long-form Identifiermindat:1:5:8489435:1
GUID0
Full Reference(1989, August) Applied Physics Letters Vol. 55 (9) AIP Publishing
Plain Text(1989, August) Applied Physics Letters Vol. 55 (9) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 55. AIP Publishing

Contains

Welch, D. F., Parke, R., Hardy, A., Streifer, W., Scifres, D. R. (1989) Low‐threshold grating‐coupled surface‐emitting lasers. Applied Physics Letters, 55 (9). 813-815 doi:10.1063/1.101767
D’Amato, F. X., Siebert, E. T., Roychoudhuri, C. (1989) Coherent operation of an array of diode lasers using a spatial filter in a Talbot cavity. Applied Physics Letters, 55 (9). 816-818 doi:10.1063/1.101768
Tanbun‐Ek, T., Temkin, H., Chu, S. N. G., Logan, R. A. (1989) Reproducible growth of low‐threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique. Applied Physics Letters, 55 (9). 819-821 doi:10.1063/1.101769
Chusseau, Laurent, Hemery, Eric, Lourtioz, Jean‐Michel (1989) Period doubling in directly modulated InGaAsP semiconductor lasers. Applied Physics Letters, 55 (9). 822-824 doi:10.1063/1.101770
Wilcox, J. Z., Ou, S., Yang, J. J., Jansen, M., Peterson, G. L. (1989) Dependence of external differential efficiency on laser length and reflectivities in multiple quantum well lasers. Applied Physics Letters, 55 (9). 825-827 doi:10.1063/1.101771
Miyazawa, T., Kagawa, T., Iwamura, H., Mikami, O., Naganuma, M. (1989) Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures. Applied Physics Letters, 55 (9). 828-829 doi:10.1063/1.101772
Ye, Peixian, Wang, Dadi, Zhang, Zhiguo, Wu, Xing (1989) Mutually coherent beam induced self‐pumped phase conjugate reflection in BaTiO3. Applied Physics Letters, 55 (9). 830-831 doi:10.1063/1.102444
Ohno, Masahiro (1989) Wave front reversal in acoustic phase conjugation by nonlinear electroacoustic interaction in LiNbO3. Applied Physics Letters, 55 (9). 832-833 doi:10.1063/1.102445
Fancey, K. S., Matthews, A. (1989) Metal clusters in ion plating. Applied Physics Letters, 55 (9). 834-836 doi:10.1063/1.101773
Ohwaki, Takeshi, Taga, Yasunori (1989) Effects of sputtered particle energy on the properties of SiO2films. Applied Physics Letters, 55 (9). 837-839 doi:10.1063/1.101575
Lo, G. Q., Shih, D. K., Ting, W. C., Kwong, D. L. (1989) Radiation effects in ultrathin nitrided oxides prepared by rapid thermal processing. Applied Physics Letters, 55 (9). 840-842 doi:10.1063/1.102446
Elliman, R. G., Ridgway, M. C., Williams, J. S., Bean, J. C. (1989) Ion beam induced epitaxial crystallization of GexSi1−x/Si structures. Applied Physics Letters, 55 (9). 843-845 doi:10.1063/1.102264
Lu, Z. H., Azelmad, A., Trudeau, Y., Yelon, A. (1989) Damage profile of ion‐implanted GaAs by x‐ray photoelectron spectroscopy. Applied Physics Letters, 55 (9). 846-848 doi:10.1063/1.101774
Haines, M. J. L. S., Cavenett, B. C., Davey, S. T. (1989) Optical phonon energies in pseudomorphic alloy strained layers. Applied Physics Letters, 55 (9). 849-851 doi:10.1063/1.101775
Coffey, K. R., Clevenger, L. A., Barmak, K., Rudman, D. A., Thompson, C. V. (1989) Experimental evidence for nucleation during thin‐film reactions. Applied Physics Letters, 55 (9). 852-854 doi:10.1063/1.102447
Chi, J. Y., Wen, X., Koteles, Emil S., Elman, B. (1989) Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2capping and rapid thermal annealing. Applied Physics Letters, 55 (9). 855-857 doi:10.1063/1.101776
Eres, Djula, Lowndes, Douglas H., Tischler, J. Z., Sharp, J. W., Geohegan, D. B., Pennycook, S. J. (1989) Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane. Applied Physics Letters, 55 (9). 858-860 doi:10.1063/1.101777
Spindt, C. J., Liu, D., Miyano, K., Meissner, P. L., Chiang, T. T., Kendelewicz, T., Lindau, I., Spicer, W. E. (1989) Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces. Applied Physics Letters, 55 (9). 861-863 doi:10.1063/1.101780
Manasreh, M. O., Mitchel, W. C., Fischer, D. W. (1989) Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique. Applied Physics Letters, 55 (9). 864-866 doi:10.1063/1.101623
Colas, E., Kapon, E., Simhony, S., Cox, H. M., Bhat, R., Kash, K., Lin, P. S. D. (1989) Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces. Applied Physics Letters, 55 (9). 867-869 doi:10.1063/1.101624
Stein, H. J. (1989) Self‐interstitials and the 935 cm−1band in silicon. Applied Physics Letters, 55 (9). 870-872 doi:10.1063/1.101625
Hartiti, B., Vu‐Thuong‐Quat, , Eichhammer, W., Muller, J.‐C., Siffert, P. (1989) Gettering of gold by rapid thermal processing. Applied Physics Letters, 55 (9). 873-875 doi:10.1063/1.101626
Dildey, F., Treichler, R., Amann, M.‐C., Schier, M., Ebbinghaus, G. (1989) Replacement of magnesium in InGaAs/InP heterostructures during zinc diffusion. Applied Physics Letters, 55 (9). 876-878 doi:10.1063/1.101627
Yamazaki, Tatsuya, Minakata, Hiroshi, Ito, Takashi (1989) Continuous growth of heavily dopedp+‐n+Si epitaxial layer using low‐temperature photoepitaxy. Applied Physics Letters, 55 (9). 879-881 doi:10.1063/1.101628
Kojima, Keisuke, Mitsunaga, Kazumasa, Kyuma, Kazuo (1989) Calculation of two‐dimensional quantum‐confined structures using the finite element method. Applied Physics Letters, 55 (9). 882-884 doi:10.1063/1.102258
Alexander, M. G. W., Rühle, W. W., Sauer, R., Tsang, W. T. (1989) Time‐resolved measurements of tunneling between double quantum wells in In0.53Ga0.47As/InP. Applied Physics Letters, 55 (9). 885-887 doi:10.1063/1.101615
Hong, S., Loehr, J. P., Oh, J. E., Bhattacharya, P. K., Singh, J. (1989) Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells. Applied Physics Letters, 55 (9). 888-890 doi:10.1063/1.101616
Trzeciakowski, W., McCombe, B. D. (1989) Tailoring the intersubband absorption in quantum wells. Applied Physics Letters, 55 (9). 891-893 doi:10.1063/1.101617
Nishiyama, Naoki, Yano, Hiroshi, Nakajima, Shigeru, Hayashi, Hideki (1989) (InAs)3(GaAs)1superlattice channel field‐effect transistor grown by molecular beam epitaxy. Applied Physics Letters, 55 (9). 894-895 doi:10.1063/1.101618
Ma, Q. Y., Yang, E. S., Treyz, G. V., Chang, Chin‐An (1989) Novel method of patterning YBaCuO superconducting thin films. Applied Physics Letters, 55 (9). 896-898 doi:10.1063/1.102448
Ohkubo, M., Kachi, T., Hioki, T., Kawamoto, J. (1989) Oxygen content control for as‐deposited YBa2Cu3Oxthin films by oxygen pressure during rapid cooling following laser deposition. Applied Physics Letters, 55 (9). 899-901 doi:10.1063/1.102449
Xiong, G. C., Wang, S. Z. (1989) Epitaxial growth of superconducting YBa2Cu3O7−xthin films by reactive magnetron sputtering. Applied Physics Letters, 55 (9). 902-904 doi:10.1063/1.102450
Ekin, J. W. (1989) Offset criterion for determining superconductor critical current. Applied Physics Letters, 55 (9). 905-907 doi:10.1063/1.102259
Casella, R. C. (1989) Comparison of interplanar‐boson‐exchange models of high‐temperature superconductivity—possible experimental tests. Applied Physics Letters, 55 (9). 908-910 doi:10.1063/1.101619
Frenkel, A., Clausen, E., Chang, C. C., Venkatesan, T., Lin, P. S. D., Wu, X. D., Inam, A., Lalevic, B. (1989) Imaging of current‐induced superconducting‐resistive transitions by scanning electron microscopy in laser‐deposited superconducting thin films of Y1Ba2Cu3O7−x. Applied Physics Letters, 55 (9). 911-913 doi:10.1063/1.101620
Cooke, D. W., Gray, E. R., Houlton, R. J., Rusnak, B., Meyer, E. A., Beery, J. G., Brown, D. R., Garzon, F. H., Raistrick, I. D., Rollet, A. D., Bolmaro, R. (1989) Surface resistance of YBa2Cu3O7films on SrTiO3and LaGaO3substrates. Applied Physics Letters, 55 (9). 914-916 doi:10.1063/1.101621
MĂźller, P., Schubert, M., Rodig, Ch., Fuchs, G., Fischer, K. (1989) Heat treatment of wires on the basis of the highTcsuperconductor YBa2Cu3Ox. Applied Physics Letters, 55 (9). 917-918 doi:10.1063/1.102451
Li, Z. G., Smith, David J., Sickafus, K. (1989) Observations of nanocrystals in thin TbFeCo films. Applied Physics Letters, 55 (9). 919-921 doi:10.1063/1.101622

See Also

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