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Hong, S., Loehr, J. P., Oh, J. E., Bhattacharya, P. K., Singh, J. (1989) Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells. Applied Physics Letters, 55 (9). 888-890 doi:10.1063/1.101616

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Reference TypeJournal (article/letter/editorial)
TitleCalculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells
JournalApplied Physics Letters
AuthorsHong, S.Author
Loehr, J. P.Author
Oh, J. E.Author
Bhattacharya, P. K.Author
Singh, J.Author
Year1989 (August 28)Volume55
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.101616Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489439Long-form Identifiermindat:1:5:8489439:7
GUID0
Full ReferenceHong, S., Loehr, J. P., Oh, J. E., Bhattacharya, P. K., Singh, J. (1989) Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells. Applied Physics Letters, 55 (9). 888-890 doi:10.1063/1.101616
Plain TextHong, S., Loehr, J. P., Oh, J. E., Bhattacharya, P. K., Singh, J. (1989) Calculations of the electric field dependent far‐infrared absorption spectra in InAs/AlGaSb quantum wells. Applied Physics Letters, 55 (9). 888-890 doi:10.1063/1.101616
In(1989, August) Applied Physics Letters Vol. 55 (9) AIP Publishing

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Kim, J.‐H., Bhattacharya, P. K., Singh, J., Gulari, E. (1990) Far‐infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells. Applied Physics Letters, 56 (19). 1901-1902 doi:10.1063/1.103039
Phillips, J., Kamath, K., Bhattacharya, P. (1998) Far-infrared photoconductivity in self-organized InAs quantum dots. Applied Physics Letters, 72 (16). 2020-2022 doi:10.1063/1.121252
Phillips, J., Kamath, K., Zhou, X., Chervela, N., Bhattacharya, P. (1997) Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots. Applied Physics Letters, 71 (15). 2079-2081 doi:10.1063/1.119347
Pamulapati, J., Loehr, J. P., Singh, J., Bhattacharya, P. K., Ludowise, M. J. (1991) Refractive index and electro‐optic effect in compressive and tensile strained quantum wells. Journal of Applied Physics, 69 (7). 4071-4074 doi:10.1063/1.348418
Olesberg, J. T., Anson, S. A., McCahon, S. W., Flatté, Michael E., Boggess, Thomas F., Chow, D. H., Hasenberg, T. C. (1998) Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells. Applied Physics Letters, 72 (2). 229-231 doi:10.1063/1.120694
Pamulapati, J., Bhattacharya, P., Tober, R. L., Loehr, J. P., Singh, J. (1992) Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques. Journal of Applied Physics, 71 (9). 4487-4491 doi:10.1063/1.350793
Mowbray, D. J., Skolnick, M. S., Lee, D., Claxton, P. A., Roberts, J. S. (1988) Electric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells. Applied Physics Letters, 53 (9). 752-754 doi:10.1063/1.99822
Zhou, X., Bhattacharya, P. K., Hugo, G., Hong, S. C., Gulari, E. (1989) Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. Applied Physics Letters, 54 (9). 855-856 doi:10.1063/1.100843
Du, Q., Alperin, J., Wang, W. I. (1995) Infrared electroabsorption modulation in AlSb/InAs/AlGaSb/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 67 (15). 2218-2219 doi:10.1063/1.115108
Loehr, J. P., Singh, J. (1990) Nonvariational numerical calculations of excitonic properties in quantum wells in the presence of strain, electric fields, and free carriers. Physical Review B, 42 (11) 7154-7162 doi:10.1103/physrevb.42.7154
Jaffe, M., Oh, J. E., Pamulapati, J., Singh, J., Bhattacharya, P. (1989) In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures. Applied Physics Letters, 54 (23). 2345-2346 doi:10.1063/1.101121
 
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