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Miyazawa, T., Kagawa, T., Iwamura, H., Mikami, O., Naganuma, M. (1989) Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures. Applied Physics Letters, 55 (9). 828-829 doi:10.1063/1.101772

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Reference TypeJournal (article/letter/editorial)
TitleTwo‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures
JournalApplied Physics Letters
AuthorsMiyazawa, T.Author
Kagawa, T.Author
Iwamura, H.Author
Mikami, O.Author
Naganuma, M.Author
Year1989 (August 28)Volume55
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.101772Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489475Long-form Identifiermindat:1:5:8489475:9
GUID0
Full ReferenceMiyazawa, T., Kagawa, T., Iwamura, H., Mikami, O., Naganuma, M. (1989) Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures. Applied Physics Letters, 55 (9). 828-829 doi:10.1063/1.101772
Plain TextMiyazawa, T., Kagawa, T., Iwamura, H., Mikami, O., Naganuma, M. (1989) Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures. Applied Physics Letters, 55 (9). 828-829 doi:10.1063/1.101772
In(1989, August) Applied Physics Letters Vol. 55 (9) AIP Publishing

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Miyazawa, Takeo, Iwamura, Hidetoshi, Mikami, Osamu, Naganuma, Mituru (1989) Compositional Disordering of In0.53Ga0.47As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1039
Kagawa, Toshiaki, Kawamura, Yuichi, Asai, Hiromitsu, Naganuma, Mitsuru, Mikami, Osamu (1989) Impact ionization rates in an InGaAs/InAlAs superlattice. Applied Physics Letters, 55 (10). 993-995 doi:10.1063/1.101699
Notomi, M., Naganuma, M., Nishida, T., Tamamura, T., Iwamura, H., Nojima, S., Okamoto, M. (1991) Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching. Applied Physics Letters, 58 (7). 720-722 doi:10.1063/1.104526
Wegener, M., Chang, T. Y., Bar‐Joseph, I., Kuo, J. M., Chemla, D. S. (1989) Electroabsorption and refraction by electron transfer in asymmetric modulation‐doped multiple quantum well structures. Applied Physics Letters, 55 (6). 583-585 doi:10.1063/1.101840
Georgiev, N., Dekorsy, T., Eichhorn, F., Helm, M., Semtsiv, M. P., Masselink, W. T. (2003) Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP. Applied Physics Letters, 83 (2). 210-212 doi:10.1063/1.1592315
Lai, K. T., Haywood, S. K., Mohamed, A. H., Missous, M., Gupta, R. (2005) Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector. Applied Physics Letters, 87 (19). 192113pp. doi:10.1063/1.2130379
Uenohara, H., Takahashi, R., Kawamura, Y., Iwamura, H. (1994) Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems. Applied Physics Letters, 64 (23). 3130-3132 doi:10.1063/1.111369
Tsen, K. T., Joshi, R., Morkoç, H. (1993) Direct measurements of electron‐optical photon scattering rates in ultrathin GaAs‐AlAs multiple quantum well structures. Applied Physics Letters, 62 (17). 2075-2077 doi:10.1063/1.109483
Suzuki, Yasuhiro, Iwamura, Hidetoshi, Miyazawa, Takeo, Mikami, Osamu (1990) Polarization mode selective channel waveguides in an InGaAs/InP disordered superlattice. Applied Physics Letters, 57 (26). 2745-2747 doi:10.1063/1.103774
Kagawa, Toshiaki, Iwamura, Hidetoshi, Mikami, Osamu (1989) Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content. Applied Physics Letters, 54 (1). 33-35 doi:10.1063/1.100825
Yu, E. T., Jackson, M. K., McGill, T. C. (1989) Hole tunneling times in GaAs/AlAs double‐barrier structures. Applied Physics Letters, 55 (8). 744-746 doi:10.1063/1.101793
 
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