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Campbell, I. H., Fauchet, P. M. (1990) cw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation. Applied Physics Letters, 57 (1). 10-12 doi:10.1063/1.103564

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Reference TypeJournal (article/letter/editorial)
Titlecw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation
JournalApplied Physics Letters
AuthorsCampbell, I. H.Author
Fauchet, P. M.Author
Year1990 (July 2)Volume57
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.103564Search in ResearchGate
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Mindat Ref. ID8491331Long-form Identifiermindat:1:5:8491331:9
GUID0
Full ReferenceCampbell, I. H., Fauchet, P. M. (1990) cw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation. Applied Physics Letters, 57 (1). 10-12 doi:10.1063/1.103564
Plain TextCampbell, I. H., Fauchet, P. M. (1990) cw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation. Applied Physics Letters, 57 (1). 10-12 doi:10.1063/1.103564
In(1990, July) Applied Physics Letters Vol. 57 (1) AIP Publishing

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Fauchet, P. M., Campbell, I. H., Adar, F. (1985) Long range material relaxation after localized laser damage. Applied Physics Letters, 47 (5). 479-481 doi:10.1063/1.96098
Gong, T., Nighan, W. L., Fauchet, P. M. (1990) Hotā€carrier Coulomb effects in GaAs investigated by femtosecond spectroscopy around the band edge. Applied Physics Letters, 57 (25). 2713-2715 doi:10.1063/1.103808
Ladany, I., Kressel, H. (1974) Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodes. Applied Physics Letters, 25 (12). 708-710 doi:10.1063/1.1655370
Okada, Y., Chen, J., Campbell, I. H., Fauchet, P. M., Wagner, S. (1990) Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen. Journal of Applied Physics, 67 (4). 1757-1760 doi:10.1063/1.345600
Campbell, I. H., Fauchet, P. M., Lyon, S. A., Nemanich, R. J. (1990) Photoluminescence above the Tauc gap ina-Si:H. Physical Review B, 41 (14) 9871-9879 doi:10.1103/physrevb.41.9871
Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ā€˜ā€˜Laserā€induced degradation of GaAs photoluminescenceā€™ā€™ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Goldstein, B., Dickson, C. R., Campbell, I. H., Fauchet, P. M. (1988) Properties ofp+microcrystalline films of SiC:H deposited by conventional rf glow discharge. Applied Physics Letters, 53 (26). 2672-2674 doi:10.1063/1.100193
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laserā€induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385
Weber, H. P., Liao, P. F., Tofield, B. C., Bridenbaugh, P. M. (1975) cw fiber laser of NdLa pentaphosphate. Applied Physics Letters, 26 (12). 692-694 doi:10.1063/1.88038
Li, Y. J., Tsuchiya, M., Petroff, P. M. (1990) Electron beam irradiation enhancement of Alā€Ga interdiffusion at GaAs/AlGaAs quantum well interfaces. Applied Physics Letters, 57 (5). 472-474 doi:10.1063/1.103669
Freeman, M. R., Awschalom, D. D., Hong, J. M. (1990) Picosecond photoluminescence excitation spectroscopy of GaAs/AlGaAs quantum wells. Applied Physics Letters, 57 (7). 704-706 doi:10.1063/1.103597
 
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