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Ng, W. K., Tan, C. H., David, J. P. R., Houston, P. A., Yee, M., Ng, J. S. (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. Applied Physics Letters, 83 (14). 2820-2822 doi:10.1063/1.1615684

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependent low-field electron multiplication in In0.53Ga0.47As
JournalApplied Physics Letters
AuthorsNg, W. K.Author
Tan, C. H.Author
David, J. P. R.Author
Houston, P. A.Author
Yee, M.Author
Ng, J. S.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1615684Search in ResearchGate
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Mindat Ref. ID8536477Long-form Identifiermindat:1:5:8536477:8
GUID0
Full ReferenceNg, W. K., Tan, C. H., David, J. P. R., Houston, P. A., Yee, M., Ng, J. S. (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. Applied Physics Letters, 83 (14). 2820-2822 doi:10.1063/1.1615684
Plain TextNg, W. K., Tan, C. H., David, J. P. R., Houston, P. A., Yee, M., Ng, J. S. (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. Applied Physics Letters, 83 (14). 2820-2822 doi:10.1063/1.1615684
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Yee, M., Ng, W. K., David, J. P. R., Houston, P. A., Harrison, C. N. (2003) Negative temperature dependence of electron multiplication in In0.53Ga0.47As. Applied Physics Letters, 82 (8). 1224-1226 doi:10.1063/1.1555284
Tan, C. H., Rees, G. J., Houston, P. A., Ng, J. S., Ng, W. K., David, J. P. R. (2004) Temperature dependence of electron impact ionization in In0.53Ga0.47As. Applied Physics Letters, 84 (13). 2322-2324 doi:10.1063/1.1691192
Chia, C. K, Ng, B. K., David, J. P. R., Rees, G. J., Tozer, R. C., Hopkinson, M., Airey, R. J., Robson, P. N. (2003) Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes. Journal of Applied Physics, 94 (4). 2631-2637 doi:10.1063/1.1593217
Ng, J. S., David, J. P. R., Rees, G. J., Allam, J. (2002) Avalanche breakdown voltage of In0.53Ga0.47As. Journal of Applied Physics, 91 (8). 5200-5202 doi:10.1063/1.1462845
Tan, S. L., Soong, W. M., Green, J. E., Steer, M. J., Zhang, S., Tan, L. J. J., Ng, J. S., Marko, I. P., Sweeney, S. J., Adams, A. R., Allam, J., David, J. P. R. (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103 (10). 102101pp. doi:10.1063/1.4819846
Liu, H. Y., Hopkinson, M., Navaretti, P., Gutierrez, M., Ng, J. S., David, J. P. R. (2003) Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. Applied Physics Letters, 83 (24). 4951-4953 doi:10.1063/1.1632027
Hsu, J. W. P., Schrey, F. F., Ng, H. M. (2003) Spatial distribution of yellow luminescence related deep levels in GaN. Applied Physics Letters, 83 (20). 4172-4174 doi:10.1063/1.1628398
Green, R. P., Krysa, A., Roberts, J. S., Revin, D. G., Wilson, L. R., Zibik, E. A., Ng, W. H., Cockburn, J. W. (2003) Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 83 (10). 1921-1922 doi:10.1063/1.1609055
Ng, B. K., David, J. P. R., Plimmer, S. A., Hopkinson, M., Tozer, R. C., Rees, G. J. (2000) Impact ionization coefficients of Al0.8Ga0.2As. Applied Physics Letters, 77 (26). 4374-4376 doi:10.1063/1.1336556
Chia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531
Massey, D. J., David, J. P. R., Tan, C. H., Ng, B. K., Rees, G. J., Robbins, D. J., Herbert, D. C. (2004) Impact ionization in submicron silicon devices. Journal of Applied Physics, 95 (10). 5931-5933 doi:10.1063/1.1691177
 
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