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Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., Wallace, R. M. (2006) Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100). Applied Physics Letters, 89 (15). 152903pp. doi:10.1063/1.2361170

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Reference TypeJournal (article/letter/editorial)
TitleEffect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)
JournalApplied Physics Letters
AuthorsSivasubramani, P.Author
Kim, J.Author
Kim, M. J.Author
Gnade, B. E.Author
Wallace, R. M.Author
Year2006 (October 9)Volume89
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2361170Search in ResearchGate
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Mindat Ref. ID8550057Long-form Identifiermindat:1:5:8550057:4
GUID0
Full ReferenceSivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., Wallace, R. M. (2006) Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100). Applied Physics Letters, 89 (15). 152903pp. doi:10.1063/1.2361170
Plain TextSivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., Wallace, R. M. (2006) Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100). Applied Physics Letters, 89 (15). 152903pp. doi:10.1063/1.2361170
In(2006, October) Applied Physics Letters Vol. 89 (15) AIP Publishing

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Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., Wallace, R. M. (2007) Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100). Journal of Applied Physics, 101 (11). 114108pp. doi:10.1063/1.2743818
Sivasubramani, P., Lee, T. H., Kim, M. J., Kim, J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Stevie, F. A., Garcia, R., Zhu, Z., Griffis, D. P. (2006) Thermal stability of lanthanum scandate dielectrics on Si(100). Applied Physics Letters, 89 (24). 242907pp. doi:10.1063/1.2405418
Pant, G., Gnade, A., Kim, M. J., Wallace, R. M., Gnade, B. E., Quevedo-Lopez, M. A., Kirsch, P. D. (2006) Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics. Applied Physics Letters, 88 (3). 32901pp. doi:10.1063/1.2165182
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Quevedo-Lopez, M. A., El-Bouanani, M., Kim, M. J., Gnade, B. E., Wallace, R. M., Visokay, M. R., LiFatou, A., Chambers, J. J., Colombo, L. (2003) Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films. Applied Physics Letters, 82 (26). 4669-4671 doi:10.1063/1.1586483
Zhao, P., Kim, M. J., Gnade, B. E., Wallace, R. M. (2007) Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-Îş gate stacks. Journal of Applied Physics, 101 (5). 53504pp. doi:10.1063/1.2434808
Sivasubramani, P., Kim, M. J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Craft, H. S., Maria, J.-P. (2005) Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001). Applied Physics Letters, 86 (20). 201901pp. doi:10.1063/1.1928316
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