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Sivasubramani, P., Kim, M. J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Craft, H. S., Maria, J.-P. (2005) Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001). Applied Physics Letters, 86 (20). 201901pp. doi:10.1063/1.1928316

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Reference TypeJournal (article/letter/editorial)
TitleOutdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)
JournalApplied Physics Letters
AuthorsSivasubramani, P.Author
Kim, M. J.Author
Gnade, B. E.Author
Wallace, R. M.Author
Edge, L. F.Author
Schlom, D. G.Author
Craft, H. S.Author
Maria, J.-P.Author
Year2005 (May 16)Volume86
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1928316Search in ResearchGate
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Mindat Ref. ID8542926Long-form Identifiermindat:1:5:8542926:0
GUID0
Full ReferenceSivasubramani, P., Kim, M. J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Craft, H. S., Maria, J.-P. (2005) Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001). Applied Physics Letters, 86 (20). 201901pp. doi:10.1063/1.1928316
Plain TextSivasubramani, P., Kim, M. J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Craft, H. S., Maria, J.-P. (2005) Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001). Applied Physics Letters, 86 (20). 201901pp. doi:10.1063/1.1928316
In(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

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Sivasubramani, P., Lee, T. H., Kim, M. J., Kim, J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., Stevie, F. A., Garcia, R., Zhu, Z., Griffis, D. P. (2006) Thermal stability of lanthanum scandate dielectrics on Si(100). Applied Physics Letters, 89 (24). 242907pp. doi:10.1063/1.2405418
Edge, L. F., Schlom, D. G., Rivillon, S., Chabal, Y. J., Agustin, M. P., Stemmer, S., Lee, T., Kim, M. J., Craft, H. S., Maria, J.-P., Hawley, M. E., Holländer, B., Schubert, J., Eisenbeiser, K. (2006) Thermal stability of amorphous LaScO3 films on silicon. Applied Physics Letters, 89 (6). 62902pp. doi:10.1063/1.2222302
Edge, L. F., Schlom, D. G., Sivasubramani, P., Wallace, R. M., Holländer, B., Schubert, J. (2006) Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon. Applied Physics Letters, 88 (11). 112907pp. doi:10.1063/1.2182019
Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., Wallace, R. M. (2006) Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100). Applied Physics Letters, 89 (15). 152903pp. doi:10.1063/1.2361170
Sivasubramani, P., Kim, J., Kim, M. J., Gnade, B. E., Wallace, R. M. (2007) Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100). Journal of Applied Physics, 101 (11). 114108pp. doi:10.1063/1.2743818
Kirsch, P. D., Quevedo-Lopez, M. A., Krishnan, S. A., Lee, B. H., Pant, G., Kim, M. J., Wallace, R. M., Gnade, B. E. (2006) Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics. Applied Physics Letters, 89 (24). 242909pp. doi:10.1063/1.2392992
Edge, L. F., Schlom, D. G., Chambers, S. A., Cicerrella, E., Freeouf, J. L., Holländer, B., Schubert, J. (2004) Measurement of the band offsets between amorphous LaAlO3 and silicon. Applied Physics Letters, 84 (5). 726-728 doi:10.1063/1.1644055
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