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Dekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G. (2010) Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H. Applied Physics Letters, 96 (1). 11902pp. doi:10.1063/1.3281249

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H
JournalApplied Physics Letters
AuthorsDekkers, H. F. W.Author
Srinivasan, Nagendra BabuAuthor
Pourtois, G.Author
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3281249Search in ResearchGate
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Mindat Ref. ID8581699Long-form Identifiermindat:1:5:8581699:8
GUID0
Full ReferenceDekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G. (2010) Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H. Applied Physics Letters, 96 (1). 11902pp. doi:10.1063/1.3281249
Plain TextDekkers, H. F. W., Srinivasan, Nagendra Babu, Pourtois, G. (2010) Influence of density on NH bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H. Applied Physics Letters, 96 (1). 11902pp. doi:10.1063/1.3281249
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

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Warren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617
Greene, W. M., Oldham, W. G., Hess, D. W. (1988) Comparison of low‐pressure and plasma‐enhanced chemical vapor deposited tungsten thin films. Applied Physics Letters, 52 (14). 1133-1135 doi:10.1063/1.99184
Parsons, G. N., Souk, J. H., Batey, J. (1991) Low hydrogen content stoichiometric silicon nitride films deposited by plasma‐enhanced chemical vapor deposition. Journal of Applied Physics, 70 (3). 1553-1560 doi:10.1063/1.349544
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