Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Soudi, A., Dhakal, P., Gu, Y. (2010) Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires. Applied Physics Letters, 96 (25). 253115pp. doi:10.1063/1.3456390

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDiameter dependence of the minority carrier diffusion length in individual ZnO nanowires
JournalApplied Physics Letters
AuthorsSoudi, A.Author
Dhakal, P.Author
Gu, Y.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3456390Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584571Long-form Identifiermindat:1:5:8584571:4
GUID0
Full ReferenceSoudi, A., Dhakal, P., Gu, Y. (2010) Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires. Applied Physics Letters, 96 (25). 253115pp. doi:10.1063/1.3456390
Plain TextSoudi, A., Dhakal, P., Gu, Y. (2010) Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires. Applied Physics Letters, 96 (25). 253115pp. doi:10.1063/1.3456390
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Soudi, A., Lopez, R., Dawson, R. D., Gu, Y. (2009) Anharmonic phonon coupling in vapor-liquid-solid grown ZnO nanowires. Applied Physics Letters, 95 (19). 193111pp. doi:10.1063/1.3263709
Edmonds, Ian (1990) Time and injection rate dependence of minority‐carrier diffusion length in solar cells irradiated with x rays. Applied Physics Letters, 57 (5). 487-488 doi:10.1063/1.103628
Shikler, R., Rosenwaks, Y. (2010) Response to “Comment on ‘Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy’ ” [Appl. Phys. Lett. 96, 216101 (2010)]. Applied Physics Letters, 96 (21). 216102pp. doi:10.1063/1.3431744
Hack, M., Shur, M. (1984) Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys. Journal of Applied Physics, 55 (8). 2967-2971 doi:10.1063/1.333340
Lastras‐Martínez, A., Raccah, P. M., Triboulet, R. (1980) Minority carrier diffusion length measurements in CdTe by a photocurrent technique. Applied Physics Letters, 36 (6). 469-471 doi:10.1063/1.91510
Ettenberg, M. (1977) The effect of reabsorbed radiation on the minority‐carrier diffusion length in GaAs. Applied Physics Letters, 30 (4). 207-210 doi:10.1063/1.89337
Lopatiuk-Tirpak, O., Chernyak, L., Wang, Y. L., Ren, F., Pearton, S. J., Gartsman, K. (2007) Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN. Applied Physics Letters, 91 (9). 92107pp. doi:10.1063/1.2776866
Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T., Hasegawa, H. (2005) Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence. Applied Physics Letters, 86 (5). 52105pp. doi:10.1063/1.1861116
Gonzalez, J. C., Bunker, K. L., Russell, P. E. (2001) Minority-carrier diffusion length in a GaN-based light-emitting diode. Applied Physics Letters, 79 (10). 1567-1569 doi:10.1063/1.1400075
Dhalluin, F., Baron, T., Ferret, P., Salem, B., Gentile, P., Harmand, J.-C. (2010) Silicon nanowires: Diameter dependence of growth rate and delay in growth. Applied Physics Letters, 96 (13). 133109pp. doi:10.1063/1.3373546
Brown, Gregory, Faifer, Vladimir, Pudov, Alex, Anikeev, Sergey, Bykov, Eugene, Contreras, Miguel, Wu, Junqiao (2010) Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current. Applied Physics Letters, 96 (2). 22104pp. doi:10.1063/1.3291046
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 21, 2025 21:08:26
Go to top of page