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Nishiyama, Iwao, Uesugi, Fumihiko (1996) Photon energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition II. Surface analysis by Auger electron spectroscopy. Applied Surface Science, 103. 299-306 doi:10.1016/0169-4332(96)00525-9

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Reference TypeJournal (article/letter/editorial)
TitlePhoton energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition II. Surface analysis by Auger electron spectroscopy
JournalApplied Surface Science
AuthorsNishiyama, IwaoAuthor
Uesugi, FumihikoAuthor
Year1996 (November)Volume103
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00525-9Search in ResearchGate
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Mindat Ref. ID9898678Long-form Identifiermindat:1:5:9898678:3
GUID0
Full ReferenceNishiyama, Iwao, Uesugi, Fumihiko (1996) Photon energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition II. Surface analysis by Auger electron spectroscopy. Applied Surface Science, 103. 299-306 doi:10.1016/0169-4332(96)00525-9
Plain TextNishiyama, Iwao, Uesugi, Fumihiko (1996) Photon energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition II. Surface analysis by Auger electron spectroscopy. Applied Surface Science, 103. 299-306 doi:10.1016/0169-4332(96)00525-9
In(n.d.) Applied Surface Science Vol. 103. Elsevier BV

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Uesugi, Fumihiko, Nishiyama, Iwao (1994) Photon energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition. Applied Surface Science, 79. 203-207 doi:10.1016/0169-4332(94)90410-3
Uesugi, Fumihiko, Nishiyama, Iwao (1992) Synchrotron-radiation-induced growth suppression and initiation in molecular-beam chemical vapor deposition of aluminum. Applied Surface Science, 60. 587-591 doi:10.1016/0169-4332(92)90479-h
Uesugi, Fumihiko, Nishiyama, Iwao (1993) Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO2 surface. Applied Surface Science, 69. 27-30 doi:10.1016/0169-4332(93)90477-s
Uesugi, Fumihiko, Nishiyama, Iwao (1992) Direct projection patterning of aluminum on the SiO2 surface by using synchrotron radiation induced growth initiation of thermal chemical vapor deposition. Applied Surface Science, 62. 151-156 doi:10.1016/0169-4332(92)90140-s
Uesugi, Fumihiko, Nishiyama, Iwao (1992) Resistless inverse projection patterning of aluminum by using synchrotron radiation induced suppression of thermal chemical vapor deposition. Applied Surface Science, 54. 284-290 doi:10.1016/0169-4332(92)90057-5
Kudo, M., Ishijima, A., Morohashi, T. (1996) Ion induced alteration at Pb-Sn alloy surface investigated by Auger electron spectroscopy and X-ray photoelectron spectroscopy. Applied Surface Science, 100. 134-137 doi:10.1016/0169-4332(96)00273-5
Liou, Yung (1996) Textured diamond growth by microwave plasma chemical vapor deposition. Applied Surface Science, 92. 115-118 doi:10.1016/0169-4332(95)00212-x
Smith, Graham C., Shuff, Philip J. (1996) Electron spectroscopy of carbonaceous materials. Applied Surface Science, 103. 199-203 doi:10.1016/0169-4332(96)00517-x
Suzuki, M., Mogi, K., Takenaka, H. (1996) Auger electron spectroscopy measurement of electron attenuation lengths using multilayer systems. Applied Surface Science, 100. 51-55 doi:10.1016/0169-4332(96)00255-3
Mutoh, Katsuhiko, Takeyama, Shigeru, Yamada, Yuka, Miyata, Takeo (1994) In-situ Auger electron spectroscopy of silicon thin films fabricated using ArF excimer laser-induced chemical vapor deposition and the oxidation process. Applied Surface Science, 79. 459-464 doi:10.1016/0169-4332(94)90455-3
Jo, Masatoshi, Tanaka, Akihiro (1996) Auger electron peaks of Cu in XPS. Applied Surface Science, 100. 11-14 doi:10.1016/0169-4332(96)00247-4
 
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