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Tomiya, S, Okuyama, H, Ishibashi, A (2000) Relation between interface morphology and recombination-enhanced defect reaction phenomena in II–VI light emitting devices. Applied Surface Science, 159. 243-249 doi:10.1016/s0169-4332(00)00061-1

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Reference TypeJournal (article/letter/editorial)
TitleRelation between interface morphology and recombination-enhanced defect reaction phenomena in II–VI light emitting devices
JournalApplied Surface Science
AuthorsTomiya, SAuthor
Okuyama, HAuthor
Ishibashi, AAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00061-1Search in ResearchGate
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Mindat Ref. ID9901901Long-form Identifiermindat:1:5:9901901:5
GUID0
Full ReferenceTomiya, S, Okuyama, H, Ishibashi, A (2000) Relation between interface morphology and recombination-enhanced defect reaction phenomena in II–VI light emitting devices. Applied Surface Science, 159. 243-249 doi:10.1016/s0169-4332(00)00061-1
Plain TextTomiya, S, Okuyama, H, Ishibashi, A (2000) Relation between interface morphology and recombination-enhanced defect reaction phenomena in II–VI light emitting devices. Applied Surface Science, 159. 243-249 doi:10.1016/s0169-4332(00)00061-1
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Itoh, S., Tomiya, S., Imoto, R., Ishibashi, A. (1997) Heterointerface control of ZnSe based II–VI laser diodes. Applied Surface Science, 117. 719-724 doi:10.1016/s0169-4332(97)80171-7
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Tomiya, S., Morita, E., Ukita, M., Okuyama, H., Itoh, S., Nakano, K., Ishibashi, A. (1995) Structural study of defects induced during current injection to II–VI blue light emitter. Applied Physics Letters, 66 (10). 1208-1210 doi:10.1063/1.113238
Kimerling, Lionel C (2000) Silicon microphotonics. Applied Surface Science, 159. 8-13 doi:10.1016/s0169-4332(00)00126-4
Ogura, A, Ono, H (2000) Evaluation of buried oxide formation in low-dose SIMOX process. Applied Surface Science, 159. 104-110 doi:10.1016/s0169-4332(00)00056-8
Nakamura, Shuji (1997) Present and future aspects of blue light emitting devices. Applied Surface Science, 113. 689-697 doi:10.1016/s0169-4332(96)00870-7
 
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