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Lucovsky, G, Niimi, H, Wu, Y, Yang, H (2000) Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces. Applied Surface Science, 159. 50-61 doi:10.1016/s0169-4332(00)00071-4

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Reference TypeJournal (article/letter/editorial)
TitleIndependent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces
JournalApplied Surface Science
AuthorsLucovsky, GAuthor
Niimi, HAuthor
Wu, YAuthor
Yang, HAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00071-4Search in ResearchGate
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Mindat Ref. ID9901911Long-form Identifiermindat:1:5:9901911:2
GUID0
Full ReferenceLucovsky, G, Niimi, H, Wu, Y, Yang, H (2000) Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces. Applied Surface Science, 159. 50-61 doi:10.1016/s0169-4332(00)00071-4
Plain TextLucovsky, G, Niimi, H, Wu, Y, Yang, H (2000) Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces. Applied Surface Science, 159. 50-61 doi:10.1016/s0169-4332(00)00071-4
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Yang, H. Y., Niimi, H., Lucovsky, G. (1998) Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. Journal of Applied Physics, 83 (4). 2327-2337 doi:10.1063/1.366976
Niimi, Hiro, Yang, Hanyang, Lucovsky, Gerald, Keister, Jeff W, Rowe, Jack E (2000) Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces. Applied Surface Science, 166. 485-491 doi:10.1016/s0169-4332(00)00480-3
Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., Lüpke, G., Kurz, H. (1997) Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C. Applied Surface Science, 117. 202-206 doi:10.1016/s0169-4332(97)80079-7
Lucovsky, G., Wu, Y., Niimi, H., Misra, V., Phillips, J. C. (1999) Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. Applied Physics Letters, 74 (14). 2005-2007 doi:10.1063/1.123728
Hinkle, C.L, Fulton, C, Nemanich, R.J, Lucovsky, G (2004) Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers. Applied Surface Science, 234. 240-245 doi:10.1016/j.apsusc.2004.05.076
Ogura, A, Ono, H (2000) Evaluation of buried oxide formation in low-dose SIMOX process. Applied Surface Science, 159. 104-110 doi:10.1016/s0169-4332(00)00056-8
Watanabe, N., Teramoto, Y., Omura, A., Nohira, H., Hattori, T. (2000) Detection of interface states correlated with SiO2/Si(111) interface structures. Applied Surface Science, 166. 460-464 doi:10.1016/s0169-4332(00)00472-4
Lucovsky, G., Niimi, H., Gölz, A., Kurz, H. (1998) Differences between silicon oxycarbide regions at SiCSiO2 prepared by plasma-assisted oxidation and thermal oxidations. Applied Surface Science, 123. 435-439 doi:10.1016/s0169-4332(97)00469-8
Korowicz, D.H., Kelly, P.V., Mongey, K.F., Crean, G.M. (2000) Surface charge analysis characterisation of ultraviolet-induced damage in silicon nitride dielectrics. Applied Surface Science, 168. 304-306 doi:10.1016/s0169-4332(00)00767-4
Fukatsu, S, Kishimoto, Y, Ishikawa, Y, Shibata, N (2000) Si(Ge)/oxide-based heterostructures and their applications to optoelectronics. Applied Surface Science, 159. 472-480 doi:10.1016/s0169-4332(00)00153-7
Teramoto, Y, Watanabe, N, Fujimura, M, Nohira, H, Hattori, T (2000) Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100). Applied Surface Science, 159. 67-71 doi:10.1016/s0169-4332(00)00052-0
 
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