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Sun, C. C., Xu, J. M. (1989) Observation of capacitive modulation of bipolar current in crystalline silicon gatedp‐i‐nstructures. Applied Physics Letters, 54 (19). 1875-1877 doi:10.1063/1.101265

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Reference TypeJournal (article/letter/editorial)
TitleObservation of capacitive modulation of bipolar current in crystalline silicon gatedp‐i‐nstructures
JournalApplied Physics Letters
AuthorsSun, C. C.Author
Xu, J. M.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101265Search in ResearchGate
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Mindat Ref. ID8486558Long-form Identifiermindat:1:5:8486558:0
GUID0
Full ReferenceSun, C. C., Xu, J. M. (1989) Observation of capacitive modulation of bipolar current in crystalline silicon gatedp‐i‐nstructures. Applied Physics Letters, 54 (19). 1875-1877 doi:10.1063/1.101265
Plain TextSun, C. C., Xu, J. M. (1989) Observation of capacitive modulation of bipolar current in crystalline silicon gatedp‐i‐nstructures. Applied Physics Letters, 54 (19). 1875-1877 doi:10.1063/1.101265
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Sturm, J. C., Prinz, E. J., Garone, P. M., Schwartz, P. V. (1989) Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors. Applied Physics Letters, 54 (26). 2707-2709 doi:10.1063/1.101003
Zhao, J., Li, G. P., Liao, K. Y., Chin, M. R., Sun, J. Y.‐C. (1993) Observation of electromigration of hydrogen in polycrystalline silicon using poly emitter bipolar transistors. Applied Physics Letters, 62 (23). 2950-2952 doi:10.1063/1.109180
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Skumanich, Andrew, Fathallah, Mohamed, Amer, Nabil M. (1989) Observation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination. Applied Physics Letters, 54 (19). 1887-1889 doi:10.1063/1.101231
de Lyon, T. J., Casey, H. C., Enquist, P. M., Hutchby, J. A., SpringThorpe, A. J. (1989) Surface recombination current and emitter compositional grading inNpnandPnpGaAs/AlxGa1−xAs heterojunction bipolar transistors. Applied Physics Letters, 54 (7). 641-643 doi:10.1063/1.100904
Uren, M. J., Collins, S., Kirton, M. J. (1989) Observation of ‘‘slow’’ states in conductance measurements on silicon metal‐oxide‐semiconductor capacitors. Applied Physics Letters, 54 (15). 1448-1450 doi:10.1063/1.100693
Johnson, N. M., Walker, J., Doland, C. M., Winer, K., Street, R. A. (1989) Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma. Applied Physics Letters, 54 (19). 1872-1874 doi:10.1063/1.101264
Yan, B., Eliat, A., Adriaenssens, G. J. (1994) Experimental study of forward current transients in amorphous siliconp‐i‐nstructures. Applied Physics Letters, 65 (18). 2338-2340 doi:10.1063/1.112737
 
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