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Park, Joon Seok, Kim, Tae Sang, Son, Kyoung Seok, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Seon, Jong-Baek, Choi, Woong, Ryu, Myung Kwan, Lee, Sang Yoon (2010) The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination. Applied Physics Letters, 96 (26). 262109pp. doi:10.1063/1.3435482

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination
JournalApplied Physics Letters
AuthorsPark, Joon SeokAuthor
Kim, Tae SangAuthor
Son, Kyoung SeokAuthor
Lee, Kwang-HeeAuthor
Maeng, Wan-JooAuthor
Kim, Hyun-SukAuthor
Kim, Eok SuAuthor
Park, Kyung-BaeAuthor
Seon, Jong-BaekAuthor
Choi, WoongAuthor
Ryu, Myung KwanAuthor
Lee, Sang YoonAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3435482Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584630Long-form Identifiermindat:1:5:8584630:6
GUID0
Full ReferencePark, Joon Seok, Kim, Tae Sang, Son, Kyoung Seok, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Seon, Jong-Baek, Choi, Woong, Ryu, Myung Kwan, Lee, Sang Yoon (2010) The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination. Applied Physics Letters, 96 (26). 262109pp. doi:10.1063/1.3435482
Plain TextPark, Joon Seok, Kim, Tae Sang, Son, Kyoung Seok, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Seon, Jong-Baek, Choi, Woong, Ryu, Myung Kwan, Lee, Sang Yoon (2010) The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination. Applied Physics Letters, 96 (26). 262109pp. doi:10.1063/1.3435482
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing


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