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Park, Joon Seok, Kim, Tae Sang, Son, Kyoung Seok, Lee, Eunha, Jung, Ji Sim, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Kwon, Jang-Yeon, Ryu, Myung Kwan, Lee, Sang Yoon (2010) Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance. Applied Physics Letters, 97 (16). 162105pp. doi:10.1063/1.3505151

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Reference TypeJournal (article/letter/editorial)
TitleTi/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance
JournalApplied Physics Letters
AuthorsPark, Joon SeokAuthor
Kim, Tae SangAuthor
Son, Kyoung SeokAuthor
Lee, EunhaAuthor
Jung, Ji SimAuthor
Lee, Kwang-HeeAuthor
Maeng, Wan-JooAuthor
Kim, Hyun-SukAuthor
Kim, Eok SuAuthor
Park, Kyung-BaeAuthor
Kwon, Jang-YeonAuthor
Ryu, Myung KwanAuthor
Lee, Sang YoonAuthor
Year2010 (October 18)Volume97
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.3505151Search in ResearchGate
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Mindat Ref. ID8587499Long-form Identifiermindat:1:5:8587499:2
GUID0
Full ReferencePark, Joon Seok, Kim, Tae Sang, Son, Kyoung Seok, Lee, Eunha, Jung, Ji Sim, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Kwon, Jang-Yeon, Ryu, Myung Kwan, Lee, Sang Yoon (2010) Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance. Applied Physics Letters, 97 (16). 162105pp. doi:10.1063/1.3505151
Plain TextPark, Joon Seok, Kim, Tae Sang, Son, Kyoung Seok, Lee, Eunha, Jung, Ji Sim, Lee, Kwang-Hee, Maeng, Wan-Joo, Kim, Hyun-Suk, Kim, Eok Su, Park, Kyung-Bae, Kwon, Jang-Yeon, Ryu, Myung Kwan, Lee, Sang Yoon (2010) Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance. Applied Physics Letters, 97 (16). 162105pp. doi:10.1063/1.3505151
In(2010, October) Applied Physics Letters Vol. 97 (16) AIP Publishing


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