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Barlow, K. J., Kiermasz, A., Eccleston, W., Moruzzi, J. L. (1988) Ionic species responsible for the plasma anodization of silicon. Applied Physics Letters, 53 (1). 57-59 doi:10.1063/1.100571

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Reference TypeJournal (article/letter/editorial)
TitleIonic species responsible for the plasma anodization of silicon
JournalApplied Physics Letters
AuthorsBarlow, K. J.Author
Kiermasz, A.Author
Eccleston, W.Author
Moruzzi, J. L.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100571Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483995Long-form Identifiermindat:1:5:8483995:6
GUID0
Full ReferenceBarlow, K. J., Kiermasz, A., Eccleston, W., Moruzzi, J. L. (1988) Ionic species responsible for the plasma anodization of silicon. Applied Physics Letters, 53 (1). 57-59 doi:10.1063/1.100571
Plain TextBarlow, K. J., Kiermasz, A., Eccleston, W., Moruzzi, J. L. (1988) Ionic species responsible for the plasma anodization of silicon. Applied Physics Letters, 53 (1). 57-59 doi:10.1063/1.100571
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Taylor, S., Eccleston, W., Barlow, K. J. (1988) Theory for the plasma anodization of silicon under constant voltage and constant current conditions. Journal of Applied Physics, 64 (11). 6515-6522 doi:10.1063/1.342076
Warren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617
Jeng, S. J., Oehrlein, G. S., Scilla, G. J. (1988) Hydrogen plasma induced defects in silicon. Applied Physics Letters, 53 (18). 1735-1737 doi:10.1063/1.99810
Pelloie, B., Perrière, J., Siejka, J., Debenest, P., Straboni, A., Vuillermoz, B. (1988) Investigation of ionic transport mechanisms during plasma anodization of Si and Si through ZrO2. Journal of Applied Physics, 63 (8). 2620-2627 doi:10.1063/1.341000
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Chesler, L. A., Robinson, G. Y. (1978) dc plasma anodization of GaAs. Applied Physics Letters, 32 (1). 60-62 doi:10.1063/1.89841
Michel, L., Schönbach, K. H., Fischer, Heinz (1974) Neutron emission from a small 1‐kJ plasma focus. Applied Physics Letters, 24 (2). 57-59 doi:10.1063/1.1655092
Li, Li, Peeters, Jozef (1993) A model for the plasma anodization of silicon at constant voltage. Journal of Applied Physics, 74 (1). 639-644 doi:10.1063/1.355225
Rao, T. Sudersena, Webb, J. B., Houghton, D. C., Baribeau, J. M., Moore, W. T., Noad, J. P. (1988) Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering. Applied Physics Letters, 53 (1). 51-53 doi:10.1063/1.100123
Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068
Gelatos, A. V., Mahavadi, K. K., Cohen, J. D., Harbison, J. P. (1988) Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon. Applied Physics Letters, 53 (5). 403-405 doi:10.1063/1.99892
 
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